Mechanical bending cycles of hydrogenated amorphous silicon layer on plastic substrate by plasma-enhanced chemical vapor deposition for use in flexible displays

Min Hung Lee, Shu Tong Chang, Yi Chun Wu, Ming Tang, Chung Yi Lin

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Atomic force microscopy (AFM) measurements and micro-Raman spectra show that the long-range hydrogenated amorphous silicon (a-Si:H) bond structure on a plastic substrate is deformed and distorted after being subjected to bending cycles, whereas the short-range a-Si:H bond structure remains the same. The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics such as threshold voltage, subthreshold swing, and mobility of carriers. From AFM and micro-Raman spectroscopy, we are able to understand the morphology of an a-Si:H layer under mechanical strain, which is the fundamental reliability issue for the development of flexible electronics.

Original languageEnglish
Article number021301
JournalJapanese Journal of Applied Physics
Issue number2
Publication statusPublished - 2009 Feb 1


ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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