Mechanical bending cycles of hydrogenated amorphous silicon layer on plastic substrate by plasma-enhanced chemical vapor deposition for use in flexible displays

Min Hung Lee, Shu Tong Chang, Yi Chun Wu, Ming Tang, Chung Yi Lin

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Abstract

Atomic force microscopy (AFM) measurements and micro-Raman spectra show that the long-range hydrogenated amorphous silicon (a-Si:H) bond structure on a plastic substrate is deformed and distorted after being subjected to bending cycles, whereas the short-range a-Si:H bond structure remains the same. The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics such as threshold voltage, subthreshold swing, and mobility of carriers. From AFM and micro-Raman spectroscopy, we are able to understand the morphology of an a-Si:H layer under mechanical strain, which is the fundamental reliability issue for the development of flexible electronics.

Original languageEnglish
Article number021301
JournalJapanese Journal of Applied Physics
Volume48
Issue number2
DOIs
Publication statusPublished - 2009 Feb 1

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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