Mcroraman study of Ge/Si quantum rings and dots

V. I. Mashanov, H. H. Cheng, L. J. Chen, C. T. Chia

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The fabrication and optical measurement of Ge/Si nanostructure was presented. The atomic force microscopy (AFM) was employed to probe the surface morphology, which shows both quantum dots (QD) and quantum rings (QR) shape Ge nanostructure. MicroRaman was performed to characterize the strain and composition QD and QR. The samples were grown by solid source molecular beam epitaxy (MBE) with electron beam evaporators for both Ge and Si. MicroRaman measurements were performed at room temperature and wavelength of 514.5 nm from Ar+ laser was used as the excitation source. The intensity of both Ge-Ge and Si-Ge modes decrease as growth temperature increase. Peak position of the Si-Ge line remains at the same position within ±1 cm-1.

Original languageEnglish
Title of host publication2004 1st IEEE International Conference on Group IV Photonics
Pages113-114
Number of pages2
Publication statusPublished - 2004 Dec 1
Event2004 1st IEEE International Conference on Group IV Photonics - Hong Kong, China, Hong Kong
Duration: 2004 Sep 292004 Oct 1

Publication series

Name2004 1st IEEE International Conference on Group IV Photonics

Other

Other2004 1st IEEE International Conference on Group IV Photonics
CountryHong Kong
CityHong Kong, China
Period04/9/2904/10/1

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Mashanov, V. I., Cheng, H. H., Chen, L. J., & Chia, C. T. (2004). Mcroraman study of Ge/Si quantum rings and dots. In 2004 1st IEEE International Conference on Group IV Photonics (pp. 113-114). (2004 1st IEEE International Conference on Group IV Photonics).