The fabrication and optical measurement of Ge/Si nanostructure was presented. The atomic force microscopy (AFM) was employed to probe the surface morphology, which shows both quantum dots (QD) and quantum rings (QR) shape Ge nanostructure. MicroRaman was performed to characterize the strain and composition QD and QR. The samples were grown by solid source molecular beam epitaxy (MBE) with electron beam evaporators for both Ge and Si. MicroRaman measurements were performed at room temperature and wavelength of 514.5 nm from Ar+ laser was used as the excitation source. The intensity of both Ge-Ge and Si-Ge modes decrease as growth temperature increase. Peak position of the Si-Ge line remains at the same position within ±1 cm-1.