Mapping band alignment across complex oxide heterointerfaces

Bo Chao Huang, Ya Ping Chiu, Po Cheng Huang, Wen Ching Wang, Vu Thanh Tra, Jan Chi Yang, Qing He, Jiunn Yuan Lin, Chia Seng Chang, Ying Hao Chu

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Abstract

In this study, direct observation of the evolution of electronic structures across complex oxide interfaces has been revealed in the LaAlO 3/SrTiO3 model system using cross-sectional scanning tunneling microscopy and spectroscopy. The conduction and valence band structures across the LaAlO3/SrTiO3 interface are spatially resolved at the atomic level by measuring the local density of states. This study directly maps out the electronic reconstructions and a built-in electric field in the polar LaAlO3 layer. Results also clearly reveal the band bending and the notched band structure in the SrTiO3 adjacent to the interface.

Original languageEnglish
Article number246807
JournalPhysical Review Letters
Volume109
Issue number24
DOIs
Publication statusPublished - 2012 Dec 12
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Huang, B. C., Chiu, Y. P., Huang, P. C., Wang, W. C., Tra, V. T., Yang, J. C., He, Q., Lin, J. Y., Chang, C. S., & Chu, Y. H. (2012). Mapping band alignment across complex oxide heterointerfaces. Physical Review Letters, 109(24), [246807]. https://doi.org/10.1103/PhysRevLett.109.246807