Magnetotransport in Gd-implanted wurtzite GaN Alx Ga1-x N high electron mobility transistor structures

F. Y. Lo; A. Melnikov; D. Reuter; Y. Cordier; A. D. Wieck

doi:10.1063/1.2899968

Magnetotransport in Gd-implanted wurtzite GaN Alx Ga1-x N high electron mobility transistor structures

F. Y. Lo^*, A. Melnikov, D. Reuter, Y. Cordier, A. D. Wieck

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

GaN Alx Ga1-x N heterostructures containing a two-dimensional electron gas (2DEG) 27 nm underneath the surface were focused-ion-beam implanted with 300 keV Gd ions at room temperature. At 4.2 K, current-voltage characteristics across implanted rectangles showed that the structures remained conducting up to a Gd dose of 1× 1012 cm-2. Extraordinary Hall effect and anisotropic magnetoresistance were observed at T=4.2 K for structures implanted with 3× 1011 cm-2 Gd. This dose corresponds to a 23% reduction in electron concentration and a decrease in the mobility by a factor of 14 at 4.2 K. However, the still-conducting 2DEG is now embedded in a ferromagnetic semiconductor which opens the possibility to polarize its spins.

Original language	English
Article number	112111
Journal	Applied Physics Letters
Volume	92
Issue number	11
DOIs	https://doi.org/10.1063/1.2899968
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{250918f138fa420a8429c06ca5f17071,

title = "Magnetotransport in Gd-implanted wurtzite GaN Alx Ga1-x N high electron mobility transistor structures",

abstract = "GaN Alx Ga1-x N heterostructures containing a two-dimensional electron gas (2DEG) 27 nm underneath the surface were focused-ion-beam implanted with 300 keV Gd ions at room temperature. At 4.2 K, current-voltage characteristics across implanted rectangles showed that the structures remained conducting up to a Gd dose of 1× 1012 cm-2. Extraordinary Hall effect and anisotropic magnetoresistance were observed at T=4.2 K for structures implanted with 3× 1011 cm-2 Gd. This dose corresponds to a 23% reduction in electron concentration and a decrease in the mobility by a factor of 14 at 4.2 K. However, the still-conducting 2DEG is now embedded in a ferromagnetic semiconductor which opens the possibility to polarize its spins.",

author = "Lo, {F. Y.} and A. Melnikov and D. Reuter and Y. Cordier and Wieck, {A. D.}",

note = "Funding Information: The authors are grateful for the support by the Deutsche Forschungsgemeinschaft in the framework of the Sonderforschungsbereich SFB 491 and the Schwerpunktprogramm Halbleiterspintronik SPP 1285, and by BMBF in the framework of nanoQUIT. The support of the Universit{\'e} Franco-Allemande (DFH/UFA) within the CDFA-05-06 is also gratefully acknowledged.",

year = "2008",

doi = "10.1063/1.2899968",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "11",

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TY - JOUR

T1 - Magnetotransport in Gd-implanted wurtzite GaN Alx Ga1-x N high electron mobility transistor structures

AU - Lo, F. Y.

AU - Melnikov, A.

AU - Reuter, D.

AU - Cordier, Y.

AU - Wieck, A. D.

N1 - Funding Information: The authors are grateful for the support by the Deutsche Forschungsgemeinschaft in the framework of the Sonderforschungsbereich SFB 491 and the Schwerpunktprogramm Halbleiterspintronik SPP 1285, and by BMBF in the framework of nanoQUIT. The support of the Université Franco-Allemande (DFH/UFA) within the CDFA-05-06 is also gratefully acknowledged.

PY - 2008

Y1 - 2008

N2 - GaN Alx Ga1-x N heterostructures containing a two-dimensional electron gas (2DEG) 27 nm underneath the surface were focused-ion-beam implanted with 300 keV Gd ions at room temperature. At 4.2 K, current-voltage characteristics across implanted rectangles showed that the structures remained conducting up to a Gd dose of 1× 1012 cm-2. Extraordinary Hall effect and anisotropic magnetoresistance were observed at T=4.2 K for structures implanted with 3× 1011 cm-2 Gd. This dose corresponds to a 23% reduction in electron concentration and a decrease in the mobility by a factor of 14 at 4.2 K. However, the still-conducting 2DEG is now embedded in a ferromagnetic semiconductor which opens the possibility to polarize its spins.

AB - GaN Alx Ga1-x N heterostructures containing a two-dimensional electron gas (2DEG) 27 nm underneath the surface were focused-ion-beam implanted with 300 keV Gd ions at room temperature. At 4.2 K, current-voltage characteristics across implanted rectangles showed that the structures remained conducting up to a Gd dose of 1× 1012 cm-2. Extraordinary Hall effect and anisotropic magnetoresistance were observed at T=4.2 K for structures implanted with 3× 1011 cm-2 Gd. This dose corresponds to a 23% reduction in electron concentration and a decrease in the mobility by a factor of 14 at 4.2 K. However, the still-conducting 2DEG is now embedded in a ferromagnetic semiconductor which opens the possibility to polarize its spins.

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DO - 10.1063/1.2899968

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ER -

Magnetotransport in Gd-implanted wurtzite GaN Alx Ga1-x N high electron mobility transistor structures

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