Magnetotransport in Gd-implanted wurtzite GaN Alx Ga1-x N high electron mobility transistor structures

F. Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, A. D. Wieck

Research output: Contribution to journalArticle

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Abstract

GaN Alx Ga1-x N heterostructures containing a two-dimensional electron gas (2DEG) 27 nm underneath the surface were focused-ion-beam implanted with 300 keV Gd ions at room temperature. At 4.2 K, current-voltage characteristics across implanted rectangles showed that the structures remained conducting up to a Gd dose of 1× 1012 cm-2. Extraordinary Hall effect and anisotropic magnetoresistance were observed at T=4.2 K for structures implanted with 3× 1011 cm-2 Gd. This dose corresponds to a 23% reduction in electron concentration and a decrease in the mobility by a factor of 14 at 4.2 K. However, the still-conducting 2DEG is now embedded in a ferromagnetic semiconductor which opens the possibility to polarize its spins.

Original languageEnglish
Article number112111
JournalApplied Physics Letters
Volume92
Issue number11
DOIs
Publication statusPublished - 2008 Mar 28

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high electron mobility transistors
wurtzite
conduction
dosage
rectangles
electron gas
Hall effect
ion beams
electric potential
room temperature
ions
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Magnetotransport in Gd-implanted wurtzite GaN Alx Ga1-x N high electron mobility transistor structures. / Lo, F. Y.; Melnikov, A.; Reuter, D.; Cordier, Y.; Wieck, A. D.

In: Applied Physics Letters, Vol. 92, No. 11, 112111, 28.03.2008.

Research output: Contribution to journalArticle

Lo, F. Y. ; Melnikov, A. ; Reuter, D. ; Cordier, Y. ; Wieck, A. D. / Magnetotransport in Gd-implanted wurtzite GaN Alx Ga1-x N high electron mobility transistor structures. In: Applied Physics Letters. 2008 ; Vol. 92, No. 11.
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