Magnetoresistivity and magnetic properties in MgB₂ thin films

Magnetotransport data on MgB₂ thin films, fabricated on Al ₂O₃ substrates using electron-bean deposition and Mg diffusion method are reported for applied magnetic fields up to 9 T. The upper critical field anisotropy, lower critical field and irreversibility field versus temperature are determined. The Hall coefficient is slightly temperature-dependent and positive in the normal state. Using the extracted data, the electronic mean free path, coherence length ξ₀, anisotropic coefficient γ and penetration depth λ are calculated.