Magnetoresistivity and magnetic properties in MgB2 thin films

T. R. Yang, G. Ilonca, A. V. Pop, V. Toma, I. Matei, F. Beiuşan

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Abstract

Magnetotransport data on MgB2 thin films, fabricated on Al 2O3 substrates using electron-bean deposition and Mg diffusion method are reported for applied magnetic fields up to 9 T. The upper critical field anisotropy, lower critical field and irreversibility field versus temperature are determined. The Hall coefficient is slightly temperature-dependent and positive in the normal state. Using the extracted data, the electronic mean free path, coherence length ξ0, anisotropic coefficient γ and penetration depth λ are calculated.

Original languageEnglish
Pages (from-to)3723-3729
Number of pages7
JournalInternational Journal of Modern Physics B
Volume19
Issue number24
DOIs
Publication statusPublished - 2005 Sep 30

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Keywords

  • Hall effect
  • Magnetization
  • Magnetotransport properties
  • Thin films

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

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