Magnetoresistivity and magnetic properties in MgB2 thin films

T. R. Yang, G. Ilonca, A. V. Pop, V. Toma, I. Matei, F. Beiuşan

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Magnetotransport data on MgB2 thin films, fabricated on Al 2O3 substrates using electron-bean deposition and Mg diffusion method are reported for applied magnetic fields up to 9 T. The upper critical field anisotropy, lower critical field and irreversibility field versus temperature are determined. The Hall coefficient is slightly temperature-dependent and positive in the normal state. Using the extracted data, the electronic mean free path, coherence length ξ0, anisotropic coefficient γ and penetration depth λ are calculated.

Original languageEnglish
Pages (from-to)3723-3729
Number of pages7
JournalInternational Journal of Modern Physics B
Volume19
Issue number24
DOIs
Publication statusPublished - 2005 Sep 30

Fingerprint

MgB2
Galvanomagnetic effects
magnetoresistivity
Magnetic Properties
Magnetoresistance
mean free path
Hall effect
Thin Films
Magnetic properties
Temperature distribution
Anisotropy
temperature distribution
penetration
Magnetic fields
magnetic properties
Thin films
anisotropy
Irreversibility
Electrons
Bean

Keywords

  • Hall effect
  • Magnetization
  • Magnetotransport properties
  • Thin films

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

Cite this

Magnetoresistivity and magnetic properties in MgB2 thin films. / Yang, T. R.; Ilonca, G.; Pop, A. V.; Toma, V.; Matei, I.; Beiuşan, F.

In: International Journal of Modern Physics B, Vol. 19, No. 24, 30.09.2005, p. 3723-3729.

Research output: Contribution to journalArticle

Yang, T. R. ; Ilonca, G. ; Pop, A. V. ; Toma, V. ; Matei, I. ; Beiuşan, F. / Magnetoresistivity and magnetic properties in MgB2 thin films. In: International Journal of Modern Physics B. 2005 ; Vol. 19, No. 24. pp. 3723-3729.
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