Magnetoresistance of La0.7Ca0.3MnO3 thin film biepitaxial step junctions

S. F. Chen, W. J. Chang, S. J. Liu, J. Y. Juang, J. Y. Lin, K. H. Wu, T. M. Uen, Y. S. Gou

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The biepitaxial La0.7Ca0.3MnO3 (LCMO) thin films grown on SrTiO3 substrates using a buffer layer of anatase TiO2 were fabricated. The magnetoresistance (MR) of biepitaxial step junction (BSJ) across the boundary layer of biepitaxial LCMO (0 0 1) and LCMO (1 1 0) film was investigated. The temperature and field dependence of MR for BSJ are qualitatively similar to those obtained in other type of artificial grain boundaries with a comparable MR ratio at low temperatures. However, the observed linear current-voltage characteristic across BSJ is in sharp contrary to the commonly reported non-ohmic characteristics. The results are consistent with features predicted by the model of spin-dependent transport across a depressed magnetic ordering and metallic-like junction layer.

Original languageEnglish
Pages (from-to)267-274
Number of pages8
JournalPhysica B: Condensed Matter
Volume336
Issue number3-4
DOIs
Publication statusPublished - 2003 Aug 1

Fingerprint

Magnetoresistance
Thin films
thin films
Buffer layers
Current voltage characteristics
Titanium dioxide
Magnetization
Boundary layers
Grain boundaries
anatase
boundary layers
Temperature
temperature distribution
grain boundaries
buffers
Substrates
temperature dependence
electric potential

Keywords

  • Biepitaxial step junction
  • Grain boundary
  • LCMO
  • Magnetoresistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Chen, S. F., Chang, W. J., Liu, S. J., Juang, J. Y., Lin, J. Y., Wu, K. H., ... Gou, Y. S. (2003). Magnetoresistance of La0.7Ca0.3MnO3 thin film biepitaxial step junctions. Physica B: Condensed Matter, 336(3-4), 267-274. https://doi.org/10.1016/S0921-4526(03)00261-8

Magnetoresistance of La0.7Ca0.3MnO3 thin film biepitaxial step junctions. / Chen, S. F.; Chang, W. J.; Liu, S. J.; Juang, J. Y.; Lin, J. Y.; Wu, K. H.; Uen, T. M.; Gou, Y. S.

In: Physica B: Condensed Matter, Vol. 336, No. 3-4, 01.08.2003, p. 267-274.

Research output: Contribution to journalArticle

Chen, SF, Chang, WJ, Liu, SJ, Juang, JY, Lin, JY, Wu, KH, Uen, TM & Gou, YS 2003, 'Magnetoresistance of La0.7Ca0.3MnO3 thin film biepitaxial step junctions', Physica B: Condensed Matter, vol. 336, no. 3-4, pp. 267-274. https://doi.org/10.1016/S0921-4526(03)00261-8
Chen, S. F. ; Chang, W. J. ; Liu, S. J. ; Juang, J. Y. ; Lin, J. Y. ; Wu, K. H. ; Uen, T. M. ; Gou, Y. S. / Magnetoresistance of La0.7Ca0.3MnO3 thin film biepitaxial step junctions. In: Physica B: Condensed Matter. 2003 ; Vol. 336, No. 3-4. pp. 267-274.
@article{e3c224911da64d14984994c7cff57554,
title = "Magnetoresistance of La0.7Ca0.3MnO3 thin film biepitaxial step junctions",
abstract = "The biepitaxial La0.7Ca0.3MnO3 (LCMO) thin films grown on SrTiO3 substrates using a buffer layer of anatase TiO2 were fabricated. The magnetoresistance (MR) of biepitaxial step junction (BSJ) across the boundary layer of biepitaxial LCMO (0 0 1) and LCMO (1 1 0) film was investigated. The temperature and field dependence of MR for BSJ are qualitatively similar to those obtained in other type of artificial grain boundaries with a comparable MR ratio at low temperatures. However, the observed linear current-voltage characteristic across BSJ is in sharp contrary to the commonly reported non-ohmic characteristics. The results are consistent with features predicted by the model of spin-dependent transport across a depressed magnetic ordering and metallic-like junction layer.",
keywords = "Biepitaxial step junction, Grain boundary, LCMO, Magnetoresistance",
author = "Chen, {S. F.} and Chang, {W. J.} and Liu, {S. J.} and Juang, {J. Y.} and Lin, {J. Y.} and Wu, {K. H.} and Uen, {T. M.} and Gou, {Y. S.}",
year = "2003",
month = "8",
day = "1",
doi = "10.1016/S0921-4526(03)00261-8",
language = "English",
volume = "336",
pages = "267--274",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier",
number = "3-4",

}

TY - JOUR

T1 - Magnetoresistance of La0.7Ca0.3MnO3 thin film biepitaxial step junctions

AU - Chen, S. F.

AU - Chang, W. J.

AU - Liu, S. J.

AU - Juang, J. Y.

AU - Lin, J. Y.

AU - Wu, K. H.

AU - Uen, T. M.

AU - Gou, Y. S.

PY - 2003/8/1

Y1 - 2003/8/1

N2 - The biepitaxial La0.7Ca0.3MnO3 (LCMO) thin films grown on SrTiO3 substrates using a buffer layer of anatase TiO2 were fabricated. The magnetoresistance (MR) of biepitaxial step junction (BSJ) across the boundary layer of biepitaxial LCMO (0 0 1) and LCMO (1 1 0) film was investigated. The temperature and field dependence of MR for BSJ are qualitatively similar to those obtained in other type of artificial grain boundaries with a comparable MR ratio at low temperatures. However, the observed linear current-voltage characteristic across BSJ is in sharp contrary to the commonly reported non-ohmic characteristics. The results are consistent with features predicted by the model of spin-dependent transport across a depressed magnetic ordering and metallic-like junction layer.

AB - The biepitaxial La0.7Ca0.3MnO3 (LCMO) thin films grown on SrTiO3 substrates using a buffer layer of anatase TiO2 were fabricated. The magnetoresistance (MR) of biepitaxial step junction (BSJ) across the boundary layer of biepitaxial LCMO (0 0 1) and LCMO (1 1 0) film was investigated. The temperature and field dependence of MR for BSJ are qualitatively similar to those obtained in other type of artificial grain boundaries with a comparable MR ratio at low temperatures. However, the observed linear current-voltage characteristic across BSJ is in sharp contrary to the commonly reported non-ohmic characteristics. The results are consistent with features predicted by the model of spin-dependent transport across a depressed magnetic ordering and metallic-like junction layer.

KW - Biepitaxial step junction

KW - Grain boundary

KW - LCMO

KW - Magnetoresistance

UR - http://www.scopus.com/inward/record.url?scp=0038447182&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038447182&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(03)00261-8

DO - 10.1016/S0921-4526(03)00261-8

M3 - Article

AN - SCOPUS:0038447182

VL - 336

SP - 267

EP - 274

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 3-4

ER -