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Magnetocurrent in a bipolar spin transistor at room temperature
Y. W. Huang
*
,
C. K. Lo
, Y. D. Yao
, L. C. Hsieh
, J. J. Ju
, D. R. Huang
, J. H. Huang
*
Corresponding author for this work
Research output
:
Contribution to journal
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Article
›
peer-review
13
Citations (Scopus)
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INIS
temperature range 0273-0400 k
100%
spin
100%
transistors
100%
devices
33%
configuration
33%
magnetoresistance
33%
p-n junctions
33%
copper
33%
Chemistry
Ambient Reaction Temperature
100%
Base
100%
Giant Magnetoresistance
50%
Engineering
Spin Transistor
100%
Room Temperature
100%
State Parallel
50%
Physics
Room Temperature
100%
Giant Magnetoresistance
50%
Material Science
Transistor
100%
Giant Magnetoresistance
50%