Magnetocurrent in a bipolar spin transistor at room temperature

Y. W. Huang; C. K. Lo; Y. D. Yao; L. C. Hsieh; J. J. Ju; D. R. Huang; J. H. Huang

doi:10.1063/1.1796522

Magnetocurrent in a bipolar spin transistor at room temperature

Y. W. Huang^*
, C. K. Lo
, Y. D. Yao
, L. C. Hsieh
, J. J. Ju
, D. R. Huang
, J. H. Huang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

A spin transistor consisting of a metallic giant magnetoresistance emitter, a copper base, and a p-n junction was discussed. It was observed that the emitter current changes from 1 mA at a magnetically parallel state to 0.968 mA at a magnetically antiparallel state. At the same states the base currents were found to be 29.3 μA and 333 nA, respectively, giving a magnetocurrent ratio of ∼8600% and a transfer ratio of 3×10^-2 at room temperature for a common collector configuration. It was found that the sensivity of this spin device is higher than 4000 %/Oe.

Original language	English
Pages (from-to)	2959-2961
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	14
DOIs	https://doi.org/10.1063/1.1796522
Publication status	Published - 2004 Oct 4
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1796522

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title = "Magnetocurrent in a bipolar spin transistor at room temperature",

abstract = "A spin transistor consisting of a metallic giant magnetoresistance emitter, a copper base, and a p-n junction was discussed. It was observed that the emitter current changes from 1 mA at a magnetically parallel state to 0.968 mA at a magnetically antiparallel state. At the same states the base currents were found to be 29.3 μA and 333 nA, respectively, giving a magnetocurrent ratio of ∼8600\% and a transfer ratio of 3×10-2 at room temperature for a common collector configuration. It was found that the sensivity of this spin device is higher than 4000 \%/Oe.",

author = "Huang, \{Y. W.\} and Lo, \{C. K.\} and Yao, \{Y. D.\} and Hsieh, \{L. C.\} and Ju, \{J. J.\} and Huang, \{D. R.\} and Huang, \{J. H.\}",

note = "Funding Information: The authors would like to thank the technical support from the Nano Technology Research Center, ITRI. They are grateful for the financial support by ROC MOEA and NSC under Grant Nos. A331XS3710 and 91-2112-M-006-029,respectively.",

year = "2004",

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doi = "10.1063/1.1796522",

language = "English",

volume = "85",

pages = "2959--2961",

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T1 - Magnetocurrent in a bipolar spin transistor at room temperature

AU - Huang, Y. W.

AU - Lo, C. K.

AU - Yao, Y. D.

AU - Hsieh, L. C.

AU - Ju, J. J.

AU - Huang, D. R.

AU - Huang, J. H.

N1 - Funding Information: The authors would like to thank the technical support from the Nano Technology Research Center, ITRI. They are grateful for the financial support by ROC MOEA and NSC under Grant Nos. A331XS3710 and 91-2112-M-006-029,respectively.

PY - 2004/10/4

Y1 - 2004/10/4

N2 - A spin transistor consisting of a metallic giant magnetoresistance emitter, a copper base, and a p-n junction was discussed. It was observed that the emitter current changes from 1 mA at a magnetically parallel state to 0.968 mA at a magnetically antiparallel state. At the same states the base currents were found to be 29.3 μA and 333 nA, respectively, giving a magnetocurrent ratio of ∼8600% and a transfer ratio of 3×10-2 at room temperature for a common collector configuration. It was found that the sensivity of this spin device is higher than 4000 %/Oe.

AB - A spin transistor consisting of a metallic giant magnetoresistance emitter, a copper base, and a p-n junction was discussed. It was observed that the emitter current changes from 1 mA at a magnetically parallel state to 0.968 mA at a magnetically antiparallel state. At the same states the base currents were found to be 29.3 μA and 333 nA, respectively, giving a magnetocurrent ratio of ∼8600% and a transfer ratio of 3×10-2 at room temperature for a common collector configuration. It was found that the sensivity of this spin device is higher than 4000 %/Oe.

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DO - 10.1063/1.1796522

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VL - 85

SP - 2959

EP - 2961

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Magnetocurrent in a bipolar spin transistor at room temperature

Abstract

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