Magnetocurrent in a bipolar spin transistor at room temperature

Y. W. Huang, C. K. Lo, Y. D. Yao, L. C. Hsieh, J. J. Ju, D. R. Huang, J. H. Huang

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Abstract

A spin transistor consisting of a metallic giant magnetoresistance emitter, a copper base, and a p-n junction was discussed. It was observed that the emitter current changes from 1 mA at a magnetically parallel state to 0.968 mA at a magnetically antiparallel state. At the same states the base currents were found to be 29.3 μA and 333 nA, respectively, giving a magnetocurrent ratio of ∼8600% and a transfer ratio of 3×10-2 at room temperature for a common collector configuration. It was found that the sensivity of this spin device is higher than 4000 %/Oe.

Original languageEnglish
Pages (from-to)2959-2961
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number14
DOIs
Publication statusPublished - 2004 Oct 4

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Huang, Y. W., Lo, C. K., Yao, Y. D., Hsieh, L. C., Ju, J. J., Huang, D. R., & Huang, J. H. (2004). Magnetocurrent in a bipolar spin transistor at room temperature. Applied Physics Letters, 85(14), 2959-2961. https://doi.org/10.1063/1.1796522