Magneto-current study in a silicon base spin valve transistor

L. C. Hsieh; Y. W. Huang; C. K. Lo; Y. D. Yao; D. R. Huang

doi:10.1016/j.jmmm.2006.02.015

Magneto-current study in a silicon base spin valve transistor

L. C. Hsieh^*, Y. W. Huang, C. K. Lo, Y. D. Yao, D. R. Huang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The magneto-current (MC) of the collector in a silicon base spin valve transistor (SVT) has been studied with both experiments and computer calculations. Two spin valve transistors of different sizes were fabricated, and the base resistor (R_B) was applied to the measurement circuit to replace the base bias (V_B). The MC ratios of the collector current (I_C) can be kept near its maximum value when the emitter bias (V_E) changes several volts for the suitable R_Bs in the experiment, and the results are very close to those of the calculations of computer.

Original language	English
Pages (from-to)	e270-e272
Journal	Journal of Magnetism and Magnetic Materials
Volume	304
Issue number	1
DOIs	https://doi.org/10.1016/j.jmmm.2006.02.015
Publication status	Published - 2006 Sept
Externally published	Yes

Keywords

Base resistance
Magneto-current
P-n junction
Spin transistor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2006.02.015

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@article{64ae5153568445c1b64ca3556ff4f9d0,

title = "Magneto-current study in a silicon base spin valve transistor",

abstract = "The magneto-current (MC) of the collector in a silicon base spin valve transistor (SVT) has been studied with both experiments and computer calculations. Two spin valve transistors of different sizes were fabricated, and the base resistor (RB) was applied to the measurement circuit to replace the base bias (VB). The MC ratios of the collector current (IC) can be kept near its maximum value when the emitter bias (VE) changes several volts for the suitable RBs in the experiment, and the results are very close to those of the calculations of computer.",

keywords = "Base resistance, Magneto-current, P-n junction, Spin transistor",

author = "Hsieh, {L. C.} and Huang, {Y. W.} and Lo, {C. K.} and Yao, {Y. D.} and Huang, {D. R.}",

year = "2006",

month = sep,

doi = "10.1016/j.jmmm.2006.02.015",

language = "English",

volume = "304",

pages = "e270--e272",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Magneto-current study in a silicon base spin valve transistor

AU - Hsieh, L. C.

AU - Huang, Y. W.

AU - Lo, C. K.

AU - Yao, Y. D.

AU - Huang, D. R.

PY - 2006/9

Y1 - 2006/9

N2 - The magneto-current (MC) of the collector in a silicon base spin valve transistor (SVT) has been studied with both experiments and computer calculations. Two spin valve transistors of different sizes were fabricated, and the base resistor (RB) was applied to the measurement circuit to replace the base bias (VB). The MC ratios of the collector current (IC) can be kept near its maximum value when the emitter bias (VE) changes several volts for the suitable RBs in the experiment, and the results are very close to those of the calculations of computer.

AB - The magneto-current (MC) of the collector in a silicon base spin valve transistor (SVT) has been studied with both experiments and computer calculations. Two spin valve transistors of different sizes were fabricated, and the base resistor (RB) was applied to the measurement circuit to replace the base bias (VB). The MC ratios of the collector current (IC) can be kept near its maximum value when the emitter bias (VE) changes several volts for the suitable RBs in the experiment, and the results are very close to those of the calculations of computer.

KW - Base resistance

KW - Magneto-current

KW - P-n junction

KW - Spin transistor

UR - http://www.scopus.com/inward/record.url?scp=33646873076&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646873076&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2006.02.015

DO - 10.1016/j.jmmm.2006.02.015

M3 - Article

AN - SCOPUS:33646873076

SN - 0304-8853

VL - 304

SP - e270-e272

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1

ER -

Magneto-current study in a silicon base spin valve transistor

Abstract

Keywords

ASJC Scopus subject areas

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