Magneto-current study in a silicon base spin valve transistor

L. C. Hsieh, Y. W. Huang, Chi-Kuen Lo, Y. D. Yao, D. R. Huang

Research output: Contribution to journalArticle

Abstract

The magneto-current (MC) of the collector in a silicon base spin valve transistor (SVT) has been studied with both experiments and computer calculations. Two spin valve transistors of different sizes were fabricated, and the base resistor (RB) was applied to the measurement circuit to replace the base bias (VB). The MC ratios of the collector current (IC) can be kept near its maximum value when the emitter bias (VE) changes several volts for the suitable RBs in the experiment, and the results are very close to those of the calculations of computer.

Original languageEnglish
JournalJournal of Magnetism and Magnetic Materials
Volume304
Issue number1
DOIs
Publication statusPublished - 2006 Sep 1

Fingerprint

Silicon
Transistors
transistors
accumulators
silicon
Resistors
Experiments
resistors
Networks (circuits)
emitters

Keywords

  • Base resistance
  • Magneto-current
  • P-n junction
  • Spin transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Magneto-current study in a silicon base spin valve transistor. / Hsieh, L. C.; Huang, Y. W.; Lo, Chi-Kuen; Yao, Y. D.; Huang, D. R.

In: Journal of Magnetism and Magnetic Materials, Vol. 304, No. 1, 01.09.2006.

Research output: Contribution to journalArticle

Hsieh, L. C. ; Huang, Y. W. ; Lo, Chi-Kuen ; Yao, Y. D. ; Huang, D. R. / Magneto-current study in a silicon base spin valve transistor. In: Journal of Magnetism and Magnetic Materials. 2006 ; Vol. 304, No. 1.
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