Magnetization reversal processes of epitaxial Fe3Si films on GaAs(001)

Y. C. Liu; P. Chang; S. Y. Huang; L. J. Chang; W. C. Lin; S. F. Lee; M. Hong; J. Kwo

doi:10.1063/1.3556785

Magnetization reversal processes of epitaxial Fe₃Si films on GaAs(001)

Y. C. Liu, P. Chang, S. Y. Huang, L. J. Chang, W. C. Lin, S. F. Lee, M. Hong, J. Kwo

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We report magneto-optical Kerr microscopy study of the magnetic reversal behavior of Fe₃Si/GaAs(100) epitaxial thin films grown by molecular beam epitaxy. Results are described in the context of superconducting quantum interference device and Kerr effect vector magnetometry to study the magnetic switching behavior. By tuning the Fe concentration of the samples from 75 to 83, we found that the ratio of uniaxial to cubic anisotropy constants ( K _u/K₁) would tremendously vary from 0.06 to 0.3. When the field was applied along the easy axis of Fe₃Si samples, a step feature was observed in the M-H loops. This feature has been resolved in the domain image by Kerr microscopy, in which we observed a two-switching behavior at the field where the step feature occurred. These can be qualitatively understood by considering the ratio.

Original language	English
Article number	07D508
Journal	Journal of Applied Physics
Volume	109
Issue number	7
DOIs	https://doi.org/10.1063/1.3556785
Publication status	Published - 2011 Apr 1
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Magnetization reversal processes of epitaxial Fe3Si films on GaAs(001)",

abstract = "We report magneto-optical Kerr microscopy study of the magnetic reversal behavior of Fe3Si/GaAs(100) epitaxial thin films grown by molecular beam epitaxy. Results are described in the context of superconducting quantum interference device and Kerr effect vector magnetometry to study the magnetic switching behavior. By tuning the Fe concentration of the samples from 75 to 83, we found that the ratio of uniaxial to cubic anisotropy constants ( K u/K1) would tremendously vary from 0.06 to 0.3. When the field was applied along the easy axis of Fe3Si samples, a step feature was observed in the M-H loops. This feature has been resolved in the domain image by Kerr microscopy, in which we observed a two-switching behavior at the field where the step feature occurred. These can be qualitatively understood by considering the ratio.",

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T1 - Magnetization reversal processes of epitaxial Fe3Si films on GaAs(001)

AU - Liu, Y. C.

AU - Chang, P.

AU - Huang, S. Y.

AU - Chang, L. J.

AU - Lin, W. C.

AU - Lee, S. F.

AU - Hong, M.

AU - Kwo, J.

PY - 2011/4/1

Y1 - 2011/4/1

N2 - We report magneto-optical Kerr microscopy study of the magnetic reversal behavior of Fe3Si/GaAs(100) epitaxial thin films grown by molecular beam epitaxy. Results are described in the context of superconducting quantum interference device and Kerr effect vector magnetometry to study the magnetic switching behavior. By tuning the Fe concentration of the samples from 75 to 83, we found that the ratio of uniaxial to cubic anisotropy constants ( K u/K1) would tremendously vary from 0.06 to 0.3. When the field was applied along the easy axis of Fe3Si samples, a step feature was observed in the M-H loops. This feature has been resolved in the domain image by Kerr microscopy, in which we observed a two-switching behavior at the field where the step feature occurred. These can be qualitatively understood by considering the ratio.

AB - We report magneto-optical Kerr microscopy study of the magnetic reversal behavior of Fe3Si/GaAs(100) epitaxial thin films grown by molecular beam epitaxy. Results are described in the context of superconducting quantum interference device and Kerr effect vector magnetometry to study the magnetic switching behavior. By tuning the Fe concentration of the samples from 75 to 83, we found that the ratio of uniaxial to cubic anisotropy constants ( K u/K1) would tremendously vary from 0.06 to 0.3. When the field was applied along the easy axis of Fe3Si samples, a step feature was observed in the M-H loops. This feature has been resolved in the domain image by Kerr microscopy, in which we observed a two-switching behavior at the field where the step feature occurred. These can be qualitatively understood by considering the ratio.

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Magnetization reversal processes of epitaxial Fe₃Si films on GaAs(001)

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