Magnetic properties of ultrathin Co/Si(111) films

Jyh Shen Tsay*, Cheng Shiuh Yang, Yeong Der Yao, Yung Liou, Shang Fan Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


The orientation of magnetization and the thickness of the ferromagnetic inactive layer at the interface of Co film and Si substrate in an ultrathin Co/Si(111) film have been studied. At the Si substrate temperature of 120 K, Co films (≤10 monolayers) with in-plane easy axis of magnetization have been successfully prepared. At the Si substrate temperature of 300 K, ultrathin Co films (3.5-10 monolayers) with canted out-of-plane easy axis of magnetization were observed. The ferromagnetic inactive layers were formed at the interface due to the intermixing of Co and Si; and were 2.8 monolayers thick for Co films deposited at 300K. However, their thicknesses were reduced to 1.4 monolayers when deposited at 120 K.

Original languageEnglish
Pages (from-to)5976-5979
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number11
Publication statusPublished - 1998 Nov
Externally publishedYes


  • Cobalt
  • Magnetic ultrathin films
  • Si(111)
  • Surface magnetooptic Kerr effect

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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