Magnetic properties of ultrathin Co/Si(111) films

Jyh Shen Tsay, Cheng Shiuh Yang, Yeong Der Yao, Yung Liou, Shang Fan Lee

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The orientation of magnetization and the thickness of the ferromagnetic inactive layer at the interface of Co film and Si substrate in an ultrathin Co/Si(111) film have been studied. At the Si substrate temperature of 120 K, Co films (≤10 monolayers) with in-plane easy axis of magnetization have been successfully prepared. At the Si substrate temperature of 300 K, ultrathin Co films (3.5-10 monolayers) with canted out-of-plane easy axis of magnetization were observed. The ferromagnetic inactive layers were formed at the interface due to the intermixing of Co and Si; and were 2.8 monolayers thick for Co films deposited at 300K. However, their thicknesses were reduced to 1.4 monolayers when deposited at 120 K.

Original languageEnglish
Pages (from-to)5976-5979
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number11
Publication statusPublished - 1998 Nov 1

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Magnetic properties
magnetic properties
Monolayers
Magnetization
magnetization
Substrates
Temperature
temperature

Keywords

  • Cobalt
  • Magnetic ultrathin films
  • Si(111)
  • Surface magnetooptic Kerr effect

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Magnetic properties of ultrathin Co/Si(111) films. / Tsay, Jyh Shen; Yang, Cheng Shiuh; Yao, Yeong Der; Liou, Yung; Lee, Shang Fan.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 37, No. 11, 01.11.1998, p. 5976-5979.

Research output: Contribution to journalArticle

Tsay, Jyh Shen ; Yang, Cheng Shiuh ; Yao, Yeong Der ; Liou, Yung ; Lee, Shang Fan. / Magnetic properties of ultrathin Co/Si(111) films. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1998 ; Vol. 37, No. 11. pp. 5976-5979.
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