Abstract
Co/Ag/Ge (111) films show an in-plane anisotropy as deposited at 200K. The ferromagnetic inactive layers, formed due to the intermixing of Co and Ge, can be efficiently reduced to zero thickness by introducing 6 monolayer (ML) Ag as a buffer layer. For Co/3ML Ag/Ge (111) films, the amount of Ag is not enough to separate Co and the Ge substrate. This results in the formation of a 2-monolayer-thick nonferromagnetic Co-Ge compound layer and a rough interface of the Co layer.
Original language | English |
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Pages (from-to) | 78-80 |
Number of pages | 3 |
Journal | Journal of Magnetism and Magnetic Materials |
Volume | 282 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 2004 Nov |
Externally published | Yes |
Event | International Symposium on Advanced Magnetic Technologies - Taipei, Taiwan Duration: 2003 Nov 13 → 2003 Nov 16 |
Keywords
- Kerr effect
- Magnetic films
- Metal-semiconductor thin film
- Surface magneto-optic Kerr effect
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics