Magnetic properties of ultrathin Co/Ag/Ge (1 1 1) films studied using surface magneto-optic Kerr effect technique

J. S. Tsay; H. Y. Nieh; Y. D. Yao; T. S. Chin

doi:10.1016/j.jmmm.2004.04.018

Magnetic properties of ultrathin Co/Ag/Ge (1 1 1) films studied using surface magneto-optic Kerr effect technique

J. S. Tsay, H. Y. Nieh, Y. D. Yao, T. S. Chin

Department of Physics

Research output: Contribution to journal › Conference article

10 Citations (Scopus)

Abstract

Co/Ag/Ge (111) films show an in-plane anisotropy as deposited at 200K. The ferromagnetic inactive layers, formed due to the intermixing of Co and Ge, can be efficiently reduced to zero thickness by introducing 6 monolayer (ML) Ag as a buffer layer. For Co/3ML Ag/Ge (111) films, the amount of Ag is not enough to separate Co and the Ge substrate. This results in the formation of a 2-monolayer-thick nonferromagnetic Co-Ge compound layer and a rough interface of the Co layer.

Original language	English
Pages (from-to)	78-80
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	282
Issue number	1-3
DOIs	https://doi.org/10.1016/j.jmmm.2004.04.018
Publication status	Published - 2004 Nov 1
Event	International Symposium on Advanced Magnetic Technologies - Taipei, Taiwan Duration: 2003 Nov 13 → 2003 Nov 16

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Keywords

Kerr effect
Magnetic films
Metal-semiconductor thin film
Surface magneto-optic Kerr effect

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

Tsay, J. S., Nieh, H. Y., Yao, Y. D., & Chin, T. S. (2004). Magnetic properties of ultrathin Co/Ag/Ge (1 1 1) films studied using surface magneto-optic Kerr effect technique. Journal of Magnetism and Magnetic Materials, 282(1-3), 78-80. https://doi.org/10.1016/j.jmmm.2004.04.018

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title = "Magnetic properties of ultrathin Co/Ag/Ge (1 1 1) films studied using surface magneto-optic Kerr effect technique",

abstract = "Co/Ag/Ge (111) films show an in-plane anisotropy as deposited at 200K. The ferromagnetic inactive layers, formed due to the intermixing of Co and Ge, can be efficiently reduced to zero thickness by introducing 6 monolayer (ML) Ag as a buffer layer. For Co/3ML Ag/Ge (111) films, the amount of Ag is not enough to separate Co and the Ge substrate. This results in the formation of a 2-monolayer-thick nonferromagnetic Co-Ge compound layer and a rough interface of the Co layer.",

keywords = "Kerr effect, Magnetic films, Metal-semiconductor thin film, Surface magneto-optic Kerr effect",

author = "Tsay, {J. S.} and Nieh, {H. Y.} and Yao, {Y. D.} and Chin, {T. S.}",

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T1 - Magnetic properties of ultrathin Co/Ag/Ge (1 1 1) films studied using surface magneto-optic Kerr effect technique

AU - Tsay, J. S.

AU - Nieh, H. Y.

AU - Yao, Y. D.

AU - Chin, T. S.

PY - 2004/11/1

Y1 - 2004/11/1

N2 - Co/Ag/Ge (111) films show an in-plane anisotropy as deposited at 200K. The ferromagnetic inactive layers, formed due to the intermixing of Co and Ge, can be efficiently reduced to zero thickness by introducing 6 monolayer (ML) Ag as a buffer layer. For Co/3ML Ag/Ge (111) films, the amount of Ag is not enough to separate Co and the Ge substrate. This results in the formation of a 2-monolayer-thick nonferromagnetic Co-Ge compound layer and a rough interface of the Co layer.

AB - Co/Ag/Ge (111) films show an in-plane anisotropy as deposited at 200K. The ferromagnetic inactive layers, formed due to the intermixing of Co and Ge, can be efficiently reduced to zero thickness by introducing 6 monolayer (ML) Ag as a buffer layer. For Co/3ML Ag/Ge (111) films, the amount of Ag is not enough to separate Co and the Ge substrate. This results in the formation of a 2-monolayer-thick nonferromagnetic Co-Ge compound layer and a rough interface of the Co layer.

KW - Kerr effect

KW - Magnetic films

KW - Metal-semiconductor thin film

KW - Surface magneto-optic Kerr effect

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JO - Journal of Magnetism and Magnetic Materials

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10.1016/j.jmmm.2004.04.018