Abstract
Co/Ag/Ge (111) films show an in-plane anisotropy as deposited at 200K. The ferromagnetic inactive layers, formed due to the intermixing of Co and Ge, can be efficiently reduced to zero thickness by introducing 6 monolayer (ML) Ag as a buffer layer. For Co/3ML Ag/Ge (111) films, the amount of Ag is not enough to separate Co and the Ge substrate. This results in the formation of a 2-monolayer-thick nonferromagnetic Co-Ge compound layer and a rough interface of the Co layer.
| Original language | English |
|---|---|
| Pages (from-to) | 78-80 |
| Number of pages | 3 |
| Journal | Journal of Magnetism and Magnetic Materials |
| Volume | 282 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 2004 Nov 1 |
| Event | International Symposium on Advanced Magnetic Technologies - Taipei, Taiwan Duration: 2003 Nov 13 → 2003 Nov 16 |
Keywords
- Kerr effect
- Magnetic films
- Metal-semiconductor thin film
- Surface magneto-optic Kerr effect
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Cite this
Tsay, J. S., Nieh, H. Y., Yao, Y. D., & Chin, T. S. (2004). Magnetic properties of ultrathin Co/Ag/Ge (1 1 1) films studied using surface magneto-optic Kerr effect technique. Journal of Magnetism and Magnetic Materials, 282(1-3), 78-80. https://doi.org/10.1016/j.jmmm.2004.04.018