Magnetic properties of ultrathin Co/Ag/Ge (1 1 1) films studied using surface magneto-optic Kerr effect technique

J. S. Tsay, H. Y. Nieh, Y. D. Yao, T. S. Chin

Research output: Contribution to journalConference article

10 Citations (Scopus)

Abstract

Co/Ag/Ge (111) films show an in-plane anisotropy as deposited at 200K. The ferromagnetic inactive layers, formed due to the intermixing of Co and Ge, can be efficiently reduced to zero thickness by introducing 6 monolayer (ML) Ag as a buffer layer. For Co/3ML Ag/Ge (111) films, the amount of Ag is not enough to separate Co and the Ge substrate. This results in the formation of a 2-monolayer-thick nonferromagnetic Co-Ge compound layer and a rough interface of the Co layer.

Original languageEnglish
Pages (from-to)78-80
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume282
Issue number1-3
DOIs
Publication statusPublished - 2004 Nov 1
EventInternational Symposium on Advanced Magnetic Technologies - Taipei, Taiwan
Duration: 2003 Nov 132003 Nov 16

Fingerprint

Magnetooptical effects
magneto-optics
Kerr effects
Monolayers
Magnetic properties
magnetic properties
Buffer layers
Anisotropy
Substrates
buffers
anisotropy

Keywords

  • Kerr effect
  • Magnetic films
  • Metal-semiconductor thin film
  • Surface magneto-optic Kerr effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Magnetic properties of ultrathin Co/Ag/Ge (1 1 1) films studied using surface magneto-optic Kerr effect technique. / Tsay, J. S.; Nieh, H. Y.; Yao, Y. D.; Chin, T. S.

In: Journal of Magnetism and Magnetic Materials, Vol. 282, No. 1-3, 01.11.2004, p. 78-80.

Research output: Contribution to journalConference article

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abstract = "Co/Ag/Ge (111) films show an in-plane anisotropy as deposited at 200K. The ferromagnetic inactive layers, formed due to the intermixing of Co and Ge, can be efficiently reduced to zero thickness by introducing 6 monolayer (ML) Ag as a buffer layer. For Co/3ML Ag/Ge (111) films, the amount of Ag is not enough to separate Co and the Ge substrate. This results in the formation of a 2-monolayer-thick nonferromagnetic Co-Ge compound layer and a rough interface of the Co layer.",
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T1 - Magnetic properties of ultrathin Co/Ag/Ge (1 1 1) films studied using surface magneto-optic Kerr effect technique

AU - Tsay, J. S.

AU - Nieh, H. Y.

AU - Yao, Y. D.

AU - Chin, T. S.

PY - 2004/11/1

Y1 - 2004/11/1

N2 - Co/Ag/Ge (111) films show an in-plane anisotropy as deposited at 200K. The ferromagnetic inactive layers, formed due to the intermixing of Co and Ge, can be efficiently reduced to zero thickness by introducing 6 monolayer (ML) Ag as a buffer layer. For Co/3ML Ag/Ge (111) films, the amount of Ag is not enough to separate Co and the Ge substrate. This results in the formation of a 2-monolayer-thick nonferromagnetic Co-Ge compound layer and a rough interface of the Co layer.

AB - Co/Ag/Ge (111) films show an in-plane anisotropy as deposited at 200K. The ferromagnetic inactive layers, formed due to the intermixing of Co and Ge, can be efficiently reduced to zero thickness by introducing 6 monolayer (ML) Ag as a buffer layer. For Co/3ML Ag/Ge (111) films, the amount of Ag is not enough to separate Co and the Ge substrate. This results in the formation of a 2-monolayer-thick nonferromagnetic Co-Ge compound layer and a rough interface of the Co layer.

KW - Kerr effect

KW - Magnetic films

KW - Metal-semiconductor thin film

KW - Surface magneto-optic Kerr effect

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