Magnetic properties of ultrathin Co/Ag/Ge (1 1 1) films studied using surface magneto-optic Kerr effect technique

J. S. Tsay; H. Y. Nieh; Y. D. Yao; T. S. Chin

doi:10.1016/j.jmmm.2004.04.018

Magnetic properties of ultrathin Co/Ag/Ge (1 1 1) films studied using surface magneto-optic Kerr effect technique

J. S. Tsay, H. Y. Nieh, Y. D. Yao, T. S. Chin

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

11 Citations (Scopus)

Abstract

Co/Ag/Ge (111) films show an in-plane anisotropy as deposited at 200K. The ferromagnetic inactive layers, formed due to the intermixing of Co and Ge, can be efficiently reduced to zero thickness by introducing 6 monolayer (ML) Ag as a buffer layer. For Co/3ML Ag/Ge (111) films, the amount of Ag is not enough to separate Co and the Ge substrate. This results in the formation of a 2-monolayer-thick nonferromagnetic Co-Ge compound layer and a rough interface of the Co layer.

Original language	English
Pages (from-to)	78-80
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	282
Issue number	1-3
DOIs	https://doi.org/10.1016/j.jmmm.2004.04.018
Publication status	Published - 2004 Nov 1
Event	International Symposium on Advanced Magnetic Technologies - Taipei, Taiwan Duration: 2003 Nov 13 → 2003 Nov 16

Keywords

Kerr effect
Magnetic films
Metal-semiconductor thin film
Surface magneto-optic Kerr effect

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Magnetic properties of ultrathin Co/Ag/Ge (1 1 1) films studied using surface magneto-optic Kerr effect technique",

abstract = "Co/Ag/Ge (111) films show an in-plane anisotropy as deposited at 200K. The ferromagnetic inactive layers, formed due to the intermixing of Co and Ge, can be efficiently reduced to zero thickness by introducing 6 monolayer (ML) Ag as a buffer layer. For Co/3ML Ag/Ge (111) films, the amount of Ag is not enough to separate Co and the Ge substrate. This results in the formation of a 2-monolayer-thick nonferromagnetic Co-Ge compound layer and a rough interface of the Co layer.",

keywords = "Kerr effect, Magnetic films, Metal-semiconductor thin film, Surface magneto-optic Kerr effect",

author = "Tsay, {J. S.} and Nieh, {H. Y.} and Yao, {Y. D.} and Chin, {T. S.}",

year = "2004",

month = nov,

day = "1",

doi = "10.1016/j.jmmm.2004.04.018",

language = "English",

volume = "282",

pages = "78--80",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "1-3",

note = "International Symposium on Advanced Magnetic Technologies ; Conference date: 13-11-2003 Through 16-11-2003",

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TY - JOUR

T1 - Magnetic properties of ultrathin Co/Ag/Ge (1 1 1) films studied using surface magneto-optic Kerr effect technique

AU - Tsay, J. S.

AU - Nieh, H. Y.

AU - Yao, Y. D.

AU - Chin, T. S.

PY - 2004/11/1

Y1 - 2004/11/1

N2 - Co/Ag/Ge (111) films show an in-plane anisotropy as deposited at 200K. The ferromagnetic inactive layers, formed due to the intermixing of Co and Ge, can be efficiently reduced to zero thickness by introducing 6 monolayer (ML) Ag as a buffer layer. For Co/3ML Ag/Ge (111) films, the amount of Ag is not enough to separate Co and the Ge substrate. This results in the formation of a 2-monolayer-thick nonferromagnetic Co-Ge compound layer and a rough interface of the Co layer.

AB - Co/Ag/Ge (111) films show an in-plane anisotropy as deposited at 200K. The ferromagnetic inactive layers, formed due to the intermixing of Co and Ge, can be efficiently reduced to zero thickness by introducing 6 monolayer (ML) Ag as a buffer layer. For Co/3ML Ag/Ge (111) films, the amount of Ag is not enough to separate Co and the Ge substrate. This results in the formation of a 2-monolayer-thick nonferromagnetic Co-Ge compound layer and a rough interface of the Co layer.

KW - Kerr effect

KW - Magnetic films

KW - Metal-semiconductor thin film

KW - Surface magneto-optic Kerr effect

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DO - 10.1016/j.jmmm.2004.04.018

M3 - Conference article

AN - SCOPUS:6344256359

VL - 282

SP - 78

EP - 80

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - 1-3

T2 - International Symposium on Advanced Magnetic Technologies

Y2 - 13 November 2003 through 16 November 2003

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