Abstract
Co/Ag/Ge (111) films show an in-plane anisotropy as deposited at 200K. The ferromagnetic inactive layers, formed due to the intermixing of Co and Ge, can be efficiently reduced to zero thickness by introducing 6 monolayer (ML) Ag as a buffer layer. For Co/3ML Ag/Ge (111) films, the amount of Ag is not enough to separate Co and the Ge substrate. This results in the formation of a 2-monolayer-thick nonferromagnetic Co-Ge compound layer and a rough interface of the Co layer.
| Original language | English |
|---|---|
| Pages (from-to) | 78-80 |
| Number of pages | 3 |
| Journal | Journal of Magnetism and Magnetic Materials |
| Volume | 282 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 2004 Nov 1 |
| Event | International Symposium on Advanced Magnetic Technologies - Taipei, Taiwan Duration: 2003 Nov 13 → 2003 Nov 16 |
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Keywords
- Kerr effect
- Magnetic films
- Metal-semiconductor thin film
- Surface magneto-optic Kerr effect
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Magnetic properties of ultrathin Co/Ag/Ge (1 1 1) films studied using surface magneto-optic Kerr effect technique. / Tsay, J. S.; Nieh, H. Y.; Yao, Y. D.; Chin, T. S.
In: Journal of Magnetism and Magnetic Materials, Vol. 282, No. 1-3, 01.11.2004, p. 78-80.Research output: Contribution to journal › Conference article
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TY - JOUR
T1 - Magnetic properties of ultrathin Co/Ag/Ge (1 1 1) films studied using surface magneto-optic Kerr effect technique
AU - Tsay, J. S.
AU - Nieh, H. Y.
AU - Yao, Y. D.
AU - Chin, T. S.
PY - 2004/11/1
Y1 - 2004/11/1
N2 - Co/Ag/Ge (111) films show an in-plane anisotropy as deposited at 200K. The ferromagnetic inactive layers, formed due to the intermixing of Co and Ge, can be efficiently reduced to zero thickness by introducing 6 monolayer (ML) Ag as a buffer layer. For Co/3ML Ag/Ge (111) films, the amount of Ag is not enough to separate Co and the Ge substrate. This results in the formation of a 2-monolayer-thick nonferromagnetic Co-Ge compound layer and a rough interface of the Co layer.
AB - Co/Ag/Ge (111) films show an in-plane anisotropy as deposited at 200K. The ferromagnetic inactive layers, formed due to the intermixing of Co and Ge, can be efficiently reduced to zero thickness by introducing 6 monolayer (ML) Ag as a buffer layer. For Co/3ML Ag/Ge (111) films, the amount of Ag is not enough to separate Co and the Ge substrate. This results in the formation of a 2-monolayer-thick nonferromagnetic Co-Ge compound layer and a rough interface of the Co layer.
KW - Kerr effect
KW - Magnetic films
KW - Metal-semiconductor thin film
KW - Surface magneto-optic Kerr effect
UR - http://www.scopus.com/inward/record.url?scp=6344256359&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=6344256359&partnerID=8YFLogxK
U2 - 10.1016/j.jmmm.2004.04.018
DO - 10.1016/j.jmmm.2004.04.018
M3 - Conference article
AN - SCOPUS:6344256359
VL - 282
SP - 78
EP - 80
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
SN - 0304-8853
IS - 1-3
ER -