Magnetic properties of interfacial layers in Co/Ge(1 1 1) thin films

J. S. Tsay; Y. T. Chen; W. C. Cheng; Y. D. Yao

doi:10.1016/j.jmmm.2004.04.019

Magnetic properties of interfacial layers in Co/Ge(1 1 1) thin films

J. S. Tsay^*, Y. T. Chen, W. C. Cheng, Y. D. Yao

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

As Co deposited on a Ge(111) substrate, Co L₃M ₄₅M₄₅ Auger line shifts to higher kinetic energy. This shift can be explained by the difference of the electronegativities of Co and Ge atoms and gives the spectroscopic evidence of the interfacial compounds. Cryogenic treatments on nonferromagnetic Co films (< 9.5ML) cause a transition to be ferromagnetic and reveal the existence of a pure cobalt layer in the Co/Ge(111) system. The thickness dependence of Curie temperature was determined for the cobalt coverage between 6.3 and 10.5ML.

Original language	English
Pages (from-to)	81-83
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	282
Issue number	1-3
DOIs	https://doi.org/10.1016/j.jmmm.2004.04.019
Publication status	Published - 2004 Nov
Externally published	Yes
Event	International Symposium on Advanced Magnetic Technologies - Taipei, Taiwan Duration: 2003 Nov 13 → 2003 Nov 16

Keywords

Auger electron spectroscopy
Magnetic films
Metal-semiconductor thin film
Surface magneto-optical Kerr effect

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1016/j.jmmm.2004.04.019

Cite this

@article{bdb973c803a2483b9b07e0ca88fcdba0,

title = "Magnetic properties of interfacial layers in Co/Ge(1 1 1) thin films",

abstract = "As Co deposited on a Ge(111) substrate, Co L3M 45M45 Auger line shifts to higher kinetic energy. This shift can be explained by the difference of the electronegativities of Co and Ge atoms and gives the spectroscopic evidence of the interfacial compounds. Cryogenic treatments on nonferromagnetic Co films (< 9.5ML) cause a transition to be ferromagnetic and reveal the existence of a pure cobalt layer in the Co/Ge(111) system. The thickness dependence of Curie temperature was determined for the cobalt coverage between 6.3 and 10.5ML.",

keywords = "Auger electron spectroscopy, Magnetic films, Metal-semiconductor thin film, Surface magneto-optical Kerr effect",

author = "Tsay, {J. S.} and Chen, {Y. T.} and Cheng, {W. C.} and Yao, {Y. D.}",

year = "2004",

month = nov,

doi = "10.1016/j.jmmm.2004.04.019",

language = "English",

volume = "282",

pages = "81--83",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "1-3",

note = "International Symposium on Advanced Magnetic Technologies ; Conference date: 13-11-2003 Through 16-11-2003",

}

TY - JOUR

T1 - Magnetic properties of interfacial layers in Co/Ge(1 1 1) thin films

AU - Tsay, J. S.

AU - Chen, Y. T.

AU - Cheng, W. C.

AU - Yao, Y. D.

PY - 2004/11

Y1 - 2004/11

N2 - As Co deposited on a Ge(111) substrate, Co L3M 45M45 Auger line shifts to higher kinetic energy. This shift can be explained by the difference of the electronegativities of Co and Ge atoms and gives the spectroscopic evidence of the interfacial compounds. Cryogenic treatments on nonferromagnetic Co films (< 9.5ML) cause a transition to be ferromagnetic and reveal the existence of a pure cobalt layer in the Co/Ge(111) system. The thickness dependence of Curie temperature was determined for the cobalt coverage between 6.3 and 10.5ML.

AB - As Co deposited on a Ge(111) substrate, Co L3M 45M45 Auger line shifts to higher kinetic energy. This shift can be explained by the difference of the electronegativities of Co and Ge atoms and gives the spectroscopic evidence of the interfacial compounds. Cryogenic treatments on nonferromagnetic Co films (< 9.5ML) cause a transition to be ferromagnetic and reveal the existence of a pure cobalt layer in the Co/Ge(111) system. The thickness dependence of Curie temperature was determined for the cobalt coverage between 6.3 and 10.5ML.

KW - Auger electron spectroscopy

KW - Magnetic films

KW - Metal-semiconductor thin film

KW - Surface magneto-optical Kerr effect

UR - http://www.scopus.com/inward/record.url?scp=6344285359&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6344285359&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2004.04.019

DO - 10.1016/j.jmmm.2004.04.019

M3 - Conference article

AN - SCOPUS:6344285359

SN - 0304-8853

VL - 282

SP - 81

EP - 83

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1-3

T2 - International Symposium on Advanced Magnetic Technologies

Y2 - 13 November 2003 through 16 November 2003

ER -

Magnetic properties of interfacial layers in Co/Ge(1 1 1) thin films

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this