Magnetic properties of interfacial layers in Co/Ge(1 1 1) thin films

J. S. Tsay*, Y. T. Chen, W. C. Cheng, Y. D. Yao

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)


As Co deposited on a Ge(111) substrate, Co L3M 45M45 Auger line shifts to higher kinetic energy. This shift can be explained by the difference of the electronegativities of Co and Ge atoms and gives the spectroscopic evidence of the interfacial compounds. Cryogenic treatments on nonferromagnetic Co films (< 9.5ML) cause a transition to be ferromagnetic and reveal the existence of a pure cobalt layer in the Co/Ge(111) system. The thickness dependence of Curie temperature was determined for the cobalt coverage between 6.3 and 10.5ML.

Original languageEnglish
Pages (from-to)81-83
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Issue number1-3
Publication statusPublished - 2004 Nov
Externally publishedYes
EventInternational Symposium on Advanced Magnetic Technologies - Taipei, Taiwan
Duration: 2003 Nov 132003 Nov 16


  • Auger electron spectroscopy
  • Magnetic films
  • Metal-semiconductor thin film
  • Surface magneto-optical Kerr effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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