Magnetic properties of Co/Si(100) thin films studied using magnetooptic Kerr effect technique

Yueh Er Wu, Jyh-Shen Tsay, Shu Ms Chen, Tsu-Yi Fu, Ching-Song Shern

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9 Citations (Scopus)

Abstract

Magnetic properties of cobalt films grown on a Si(100) substrate were investigated using the magnetooptic Kerr effect technique. The longitudinal coercivity for the films with a thickness range from 2.4 to 17.7 nm is observed to be approximately 55 Oe. The easy axis of magnetization is in the surface plane. Because of silicide formation at the interface and a short absorption length for light in condensed matter, the Kerr intensity is not completely proportional to the film thickness. Thermal evolution for the Co/Si(100) system was systematically investigated. A higher thermal stability is concluded for a thicker cobalt film. At a low temperature, the Kerr intensity is nearly maintained constant upon annealing treatment. This is expected to be due to the Co-Si compound at the interface blocking further interdiffusion.

Original languageEnglish
Pages (from-to)6825-6828
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number12
Publication statusPublished - 2001 Dec 1

Fingerprint

Magnetooptical effects
Kerr effects
Magnetic properties
magnetic properties
Thin films
Cobalt
cobalt
thin films
Coercive force
coercivity
Film thickness
Magnetization
Thermodynamic stability
thermal stability
film thickness
Annealing
magnetization
annealing
Substrates
Temperature

Keywords

  • Cobalt
  • Magnetic films
  • Magnetooptic Kerr effect
  • Si(100)

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Magnetic properties of Co/Si(100) thin films studied using magnetooptic Kerr effect technique",
abstract = "Magnetic properties of cobalt films grown on a Si(100) substrate were investigated using the magnetooptic Kerr effect technique. The longitudinal coercivity for the films with a thickness range from 2.4 to 17.7 nm is observed to be approximately 55 Oe. The easy axis of magnetization is in the surface plane. Because of silicide formation at the interface and a short absorption length for light in condensed matter, the Kerr intensity is not completely proportional to the film thickness. Thermal evolution for the Co/Si(100) system was systematically investigated. A higher thermal stability is concluded for a thicker cobalt film. At a low temperature, the Kerr intensity is nearly maintained constant upon annealing treatment. This is expected to be due to the Co-Si compound at the interface blocking further interdiffusion.",
keywords = "Cobalt, Magnetic films, Magnetooptic Kerr effect, Si(100)",
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T1 - Magnetic properties of Co/Si(100) thin films studied using magnetooptic Kerr effect technique

AU - Wu, Yueh Er

AU - Tsay, Jyh-Shen

AU - Chen, Shu Ms

AU - Fu, Tsu-Yi

AU - Shern, Ching-Song

PY - 2001/12/1

Y1 - 2001/12/1

N2 - Magnetic properties of cobalt films grown on a Si(100) substrate were investigated using the magnetooptic Kerr effect technique. The longitudinal coercivity for the films with a thickness range from 2.4 to 17.7 nm is observed to be approximately 55 Oe. The easy axis of magnetization is in the surface plane. Because of silicide formation at the interface and a short absorption length for light in condensed matter, the Kerr intensity is not completely proportional to the film thickness. Thermal evolution for the Co/Si(100) system was systematically investigated. A higher thermal stability is concluded for a thicker cobalt film. At a low temperature, the Kerr intensity is nearly maintained constant upon annealing treatment. This is expected to be due to the Co-Si compound at the interface blocking further interdiffusion.

AB - Magnetic properties of cobalt films grown on a Si(100) substrate were investigated using the magnetooptic Kerr effect technique. The longitudinal coercivity for the films with a thickness range from 2.4 to 17.7 nm is observed to be approximately 55 Oe. The easy axis of magnetization is in the surface plane. Because of silicide formation at the interface and a short absorption length for light in condensed matter, the Kerr intensity is not completely proportional to the film thickness. Thermal evolution for the Co/Si(100) system was systematically investigated. A higher thermal stability is concluded for a thicker cobalt film. At a low temperature, the Kerr intensity is nearly maintained constant upon annealing treatment. This is expected to be due to the Co-Si compound at the interface blocking further interdiffusion.

KW - Cobalt

KW - Magnetic films

KW - Magnetooptic Kerr effect

KW - Si(100)

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