Magnetic decoupling of Fe coverage across atomic step of MoS2 flakes on SiO2 surface

Chuan Che Hsu, Zong You Lin, Po Chun Chang, Hsiang Chih Chiu, Hsiao Wen Chen, Hsiang Lin Liu, Francesco Bisio, Wen Chin Lin

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this study, we deposited Fe films on MoS2 flakes, and investigated the microscopic magnetic behavior on individual flakes. The MoS2 flakes were fabricated on SiO2/Si(1 0 0) substrates using chemical vapor deposition. Fe coverage was deposited on the MoS2 flakes by e-beam evaporation with a thin Pd capping for protection. Investigations by atomic force microscope and Raman spectroscopy confirmed that the MoS2 flakes had a mean lateral size of 10-20 μ m and mostly single layer thick. After depositing 3.6 and 7.0 nm Fe on MoS2/SiO2, clear hysteresis loops were observable with the in-plane magnetic field. From the investigation using a magneto-optical Kerr microscope, we measured the hysteresis curves within individual MoS2 flakes. Although the Fe coverage was much thicker than the MoS2 atomic step height (∼0.66 nm) and the direct connection and strong ferromagnetic coupling between Fe/MoS2 and Fe/SiO2 were expected, a magnetic decoupling between the magnetic domains of Fe/MoS2 and Fe/SiO2 was surprisingly observed. For 3.6 nm Fe/MoS2, the magnetic coercivity (H c) was 28 ± 5 Oe, while in contrast, the H c of 3.6 nm Fe/SiO2 ranged 58 ± 5 Oe. With a thicker Fe coverage of 7.0 nm, the H c of Fe/MoS2 and Fe/SiO2 converged and the magnetic decoupling became too weak to observe. The distinct interface magnetic anisotropy of Fe on different substrates was held responsible for the observed magnetic decoupling across the MoS2 atomic step between Fe/MoS2 and Fe/SiO2 domains. These observations will be valuable in combining a magnetic coverage with a single layer MoS2 for future spintronic applications.

Original languageEnglish
Article number415001
JournalJournal of Physics D: Applied Physics
Volume50
Issue number41
DOIs
Publication statusPublished - 2017 Sep 15

Fingerprint

flakes
decoupling
Microscopes
Magnetoelectronics
Magnetic domains
Magnetic anisotropy
Substrates
Hysteresis loops
Coercive force
Hysteresis
Raman spectroscopy
Chemical vapor deposition
Evaporation
Magnetic fields
hysteresis
microscopes
magnetic domains
coercivity
evaporation
vapor deposition

Keywords

  • interface anisotropy
  • magnetism
  • thin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Magnetic decoupling of Fe coverage across atomic step of MoS2 flakes on SiO2 surface. / Hsu, Chuan Che; Lin, Zong You; Chang, Po Chun; Chiu, Hsiang Chih; Chen, Hsiao Wen; Liu, Hsiang Lin; Bisio, Francesco; Lin, Wen Chin.

In: Journal of Physics D: Applied Physics, Vol. 50, No. 41, 415001, 15.09.2017.

Research output: Contribution to journalArticle

Hsu, Chuan Che ; Lin, Zong You ; Chang, Po Chun ; Chiu, Hsiang Chih ; Chen, Hsiao Wen ; Liu, Hsiang Lin ; Bisio, Francesco ; Lin, Wen Chin. / Magnetic decoupling of Fe coverage across atomic step of MoS2 flakes on SiO2 surface. In: Journal of Physics D: Applied Physics. 2017 ; Vol. 50, No. 41.
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AU - Hsu, Chuan Che

AU - Lin, Zong You

AU - Chang, Po Chun

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AU - Chen, Hsiao Wen

AU - Liu, Hsiang Lin

AU - Bisio, Francesco

AU - Lin, Wen Chin

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AB - In this study, we deposited Fe films on MoS2 flakes, and investigated the microscopic magnetic behavior on individual flakes. The MoS2 flakes were fabricated on SiO2/Si(1 0 0) substrates using chemical vapor deposition. Fe coverage was deposited on the MoS2 flakes by e-beam evaporation with a thin Pd capping for protection. Investigations by atomic force microscope and Raman spectroscopy confirmed that the MoS2 flakes had a mean lateral size of 10-20 μ m and mostly single layer thick. After depositing 3.6 and 7.0 nm Fe on MoS2/SiO2, clear hysteresis loops were observable with the in-plane magnetic field. From the investigation using a magneto-optical Kerr microscope, we measured the hysteresis curves within individual MoS2 flakes. Although the Fe coverage was much thicker than the MoS2 atomic step height (∼0.66 nm) and the direct connection and strong ferromagnetic coupling between Fe/MoS2 and Fe/SiO2 were expected, a magnetic decoupling between the magnetic domains of Fe/MoS2 and Fe/SiO2 was surprisingly observed. For 3.6 nm Fe/MoS2, the magnetic coercivity (H c) was 28 ± 5 Oe, while in contrast, the H c of 3.6 nm Fe/SiO2 ranged 58 ± 5 Oe. With a thicker Fe coverage of 7.0 nm, the H c of Fe/MoS2 and Fe/SiO2 converged and the magnetic decoupling became too weak to observe. The distinct interface magnetic anisotropy of Fe on different substrates was held responsible for the observed magnetic decoupling across the MoS2 atomic step between Fe/MoS2 and Fe/SiO2 domains. These observations will be valuable in combining a magnetic coverage with a single layer MoS2 for future spintronic applications.

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