Magnetic and structural properties of Gd-implanted zinc-blende GaN

F. Y. Lo; A. Melnikov; D. Reuter; A. D. Wieck; V. Ney; T. Kammermeier; A. Ney; J. Schörmann; S. Potthast; D. J. As; K. Lischka

doi:10.1063/1.2753113

Magnetic and structural properties of Gd-implanted zinc-blende GaN

F. Y. Lo^*, A. Melnikov, D. Reuter, A. D. Wieck, V. Ney, T. Kammermeier, A. Ney, J. Schörmann, S. Potthast, D. J. As, K. Lischka

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

Zinc-blende GaN layers grown by molecular beam epitaxy were uniformly focused-ion-beam implanted with 300 keV Gd3+ ions for doses ranging from 1× 1012 to 1× 1015 cm-2, and their structural and magnetic properties were studied. The implanted samples were not subjected to any annealing treatment. Only Gd incorporation into zinc-blende GaN was observed by x-ray diffraction. Magnetic investigations using superconducting quantum interference device magnetometry reveal a (super)paramagneticlike behavior with an ordering temperature around 60 K for the sample with the highest implantation dose. Our experimental studies indicate that the spontaneous electric polarization in wurtzite GaN is the crucial mechanism for its ferromagneticlike behavior upon Gd doping.

Original language	English
Article number	262505
Journal	Applied Physics Letters
Volume	90
Issue number	26
DOIs	https://doi.org/10.1063/1.2753113
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2753113

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@article{3bc9107dcef84bd6a1f5567022d6f786,

title = "Magnetic and structural properties of Gd-implanted zinc-blende GaN",

abstract = "Zinc-blende GaN layers grown by molecular beam epitaxy were uniformly focused-ion-beam implanted with 300 keV Gd3+ ions for doses ranging from 1× 1012 to 1× 1015 cm-2, and their structural and magnetic properties were studied. The implanted samples were not subjected to any annealing treatment. Only Gd incorporation into zinc-blende GaN was observed by x-ray diffraction. Magnetic investigations using superconducting quantum interference device magnetometry reveal a (super)paramagneticlike behavior with an ordering temperature around 60 K for the sample with the highest implantation dose. Our experimental studies indicate that the spontaneous electric polarization in wurtzite GaN is the crucial mechanism for its ferromagneticlike behavior upon Gd doping.",

author = "Lo, {F. Y.} and A. Melnikov and D. Reuter and Wieck, {A. D.} and V. Ney and T. Kammermeier and A. Ney and J. Sch{\"o}rmann and S. Potthast and As, {D. J.} and K. Lischka",

note = "Funding Information: The research was supported by the Deutsche Forschungsgemeinschaft in the framework of the Sonderforschungsbereich 491 and by the European Union under the Marie-Curie Excellence Grant No. MEXT-CT-2004-01495 of the sixth Framework Programme. Two of the authors (D.J.A. and K.L.) would like to thank H. Nagasawa and M. Abe from SiC Development Center, Hoya Corporation for supplying the substrates.",

year = "2007",

doi = "10.1063/1.2753113",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "26",

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TY - JOUR

T1 - Magnetic and structural properties of Gd-implanted zinc-blende GaN

AU - Lo, F. Y.

AU - Melnikov, A.

AU - Reuter, D.

AU - Wieck, A. D.

AU - Ney, V.

AU - Kammermeier, T.

AU - Ney, A.

AU - Schörmann, J.

AU - Potthast, S.

AU - As, D. J.

AU - Lischka, K.

N1 - Funding Information: The research was supported by the Deutsche Forschungsgemeinschaft in the framework of the Sonderforschungsbereich 491 and by the European Union under the Marie-Curie Excellence Grant No. MEXT-CT-2004-01495 of the sixth Framework Programme. Two of the authors (D.J.A. and K.L.) would like to thank H. Nagasawa and M. Abe from SiC Development Center, Hoya Corporation for supplying the substrates.

PY - 2007

Y1 - 2007

N2 - Zinc-blende GaN layers grown by molecular beam epitaxy were uniformly focused-ion-beam implanted with 300 keV Gd3+ ions for doses ranging from 1× 1012 to 1× 1015 cm-2, and their structural and magnetic properties were studied. The implanted samples were not subjected to any annealing treatment. Only Gd incorporation into zinc-blende GaN was observed by x-ray diffraction. Magnetic investigations using superconducting quantum interference device magnetometry reveal a (super)paramagneticlike behavior with an ordering temperature around 60 K for the sample with the highest implantation dose. Our experimental studies indicate that the spontaneous electric polarization in wurtzite GaN is the crucial mechanism for its ferromagneticlike behavior upon Gd doping.

AB - Zinc-blende GaN layers grown by molecular beam epitaxy were uniformly focused-ion-beam implanted with 300 keV Gd3+ ions for doses ranging from 1× 1012 to 1× 1015 cm-2, and their structural and magnetic properties were studied. The implanted samples were not subjected to any annealing treatment. Only Gd incorporation into zinc-blende GaN was observed by x-ray diffraction. Magnetic investigations using superconducting quantum interference device magnetometry reveal a (super)paramagneticlike behavior with an ordering temperature around 60 K for the sample with the highest implantation dose. Our experimental studies indicate that the spontaneous electric polarization in wurtzite GaN is the crucial mechanism for its ferromagneticlike behavior upon Gd doping.

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VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 262505

ER -

Magnetic and structural properties of Gd-implanted zinc-blende GaN

Abstract

ASJC Scopus subject areas

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