Power consumption is the most difficult challenge for CMOS integrated circuits. Here, we demonstrate experimentally a novel steep turn-on pMOSFET for low-voltage operation for the first time, which exhibits 5-60 mV/decade SS, wide voltage range for SS <60~ mV decade sturdy < 60~ mV decade SS at 85̂ C, faster transistor turn-on at above threshold voltage, and lower off-state leakage by greater than three orders of magnitude. Such improved leakage current is crucial to decrease the off-state leakage current in sub-1X nm CMOS. This was achieved using ferroelectric high-κ ZrHfO gate dielectric pMOSFET.
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|Publication status||Published - 2014 Feb|
- sub-threshold swing
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering