Abstract
Power consumption is the most difficult challenge for CMOS integrated circuits. Here, we demonstrate experimentally a novel steep turn-on pMOSFET for low-voltage operation for the first time, which exhibits 5-60 mV/decade SS, wide voltage range for SS <60~ mV decade sturdy < 60~ mV decade SS at 85̂ C, faster transistor turn-on at above threshold voltage, and lower off-state leakage by greater than three orders of magnitude. Such improved leakage current is crucial to decrease the off-state leakage current in sub-1X nm CMOS. This was achieved using ferroelectric high-κ ZrHfO gate dielectric pMOSFET.
Original language | English |
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Article number | 6693802 |
Pages (from-to) | 274-276 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 35 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2014 Feb |
Keywords
- Ferroelectric
- ZrHfO
- sub-threshold swing
- transistor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering