Low-voltage steep turn-on pMOSFET using ferroelectric high-κ gate dielectric

Chun-Hu Cheng, Albert Chin

Research output: Contribution to journalArticle

76 Citations (Scopus)

Abstract

Power consumption is the most difficult challenge for CMOS integrated circuits. Here, we demonstrate experimentally a novel steep turn-on pMOSFET for low-voltage operation for the first time, which exhibits 5-60 mV/decade SS, wide voltage range for SS <60~ mV decade sturdy < 60~ mV decade SS at 85̂ C, faster transistor turn-on at above threshold voltage, and lower off-state leakage by greater than three orders of magnitude. Such improved leakage current is crucial to decrease the off-state leakage current in sub-1X nm CMOS. This was achieved using ferroelectric high-κ ZrHfO gate dielectric pMOSFET.

Original languageEnglish
Article number6693802
Pages (from-to)274-276
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number2
DOIs
Publication statusPublished - 2014 Feb 1

Fingerprint

Gate dielectrics
Leakage currents
Ferroelectric materials
CMOS integrated circuits
Electric potential
Threshold voltage
Transistors
Electric power utilization

Keywords

  • Ferroelectric
  • ZrHfO
  • sub-threshold swing
  • transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Low-voltage steep turn-on pMOSFET using ferroelectric high-κ gate dielectric. / Cheng, Chun-Hu; Chin, Albert.

In: IEEE Electron Device Letters, Vol. 35, No. 2, 6693802, 01.02.2014, p. 274-276.

Research output: Contribution to journalArticle

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