Low-voltage InGaZnO thin film transistors with small sub-threshold swing

C. H. Cheng*, K. I. Chou, H. H. Hsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


We demonstrate a low-voltage driven, indium-gallium-zinc oxide thin-film transistor using high-κ LaAlO3 gate dielectric. A low VT of 0.42 V, very small sub-threshold swing of 68 mV/dec, field-effect mobility of 4.1 cm2/Vs and low operation voltage of 1.4 V were reached simultaneously in LaAlO3/IGZO TFT device. This low-power and small SS TFT has the potential for fast switching speed and low power applications.

Original languageEnglish
Pages (from-to)1486-1489
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number2
Publication statusPublished - 2015 Jan 1


  • InGaZnO
  • LaAlO
  • Sub-threshold swing
  • Thin film transistor

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • Biomedical Engineering
  • General Materials Science
  • Condensed Matter Physics


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