Low-voltage InGaZnO thin film transistors with small sub-threshold swing

C. H. Cheng, K. I. Chou, H. H. Hsu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We demonstrate a low-voltage driven, indium-gallium-zinc oxide thin-film transistor using high-κ LaAlO3 gate dielectric. A low VT of 0.42 V, very small sub-threshold swing of 68 mV/dec, field-effect mobility of 4.1 cm2/Vs and low operation voltage of 1.4 V were reached simultaneously in LaAlO3/IGZO TFT device. This low-power and small SS TFT has the potential for fast switching speed and low power applications.

Original languageEnglish
Pages (from-to)1486-1489
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume15
Issue number2
DOIs
Publication statusPublished - 2015 Jan 1

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Keywords

  • InGaZnO
  • LaAlO
  • Sub-threshold swing
  • Thin film transistor

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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