Low-threshold-voltage TaN/Ir/LaTiO p-MOSFETs incorporating low-temperature-formed shallow junctions

S. H. Lin*, C. H. Cheng, W. B. Chen, F. S. Yeh, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

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Engineering & Materials Science

Chemical Compounds