Low-temperature chlorination of GaAs(100)

Wei-Hsiu Hung, Shuenn Lii Wu, Che Chen Chang

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The chemisorption and the reaction of chlorine and hydrogen chloride on the GaAs(100)-4 × 6 surface at 110 K are investigated using soft X-ray photoelectron spectroscopy which employs synchrotron radiation. At low exposures, Cl2 and HCl dissociate and preferentially adsorb on the As atom, which causes As-Ga bond breakage to initiate chlorination of the Ga atom. AsxCl is proposed to form at initial chlorination, in which the Cl atom is bonded to a high coordination site. Subsequently, various AsClx and GaClx (x = 1, 2, and 3) species are formed on the GaAs surface, and their corresponding chemical shifts are assigned. At high exposures, chlorination of the GaAs surface is saturated, and the surface is mainly covered with physisorbed Cl2 and HCl molecules. Synchrotron radiation on the chlorinated GaAs surface stimulates both the photodesorption of Ga and As chlorides and the photodissociation of physisorbed Cl2 molecules. A potential route for anisotropic cryogenic etching of the GaAs surface by the chlorine-containing compound under photon irradiation is discussed.

Original languageEnglish
Pages (from-to)1141-1148
Number of pages8
JournalJournal of Physical Chemistry B
Volume102
Issue number7
Publication statusPublished - 1998 Feb 12

Fingerprint

chlorination
Chlorination
Halogenation
Temperature
Synchrotrons
Chlorine
Synchrotron radiation
Chlorine Compounds
Atoms
Radiation
synchrotron radiation
chlorine compounds
Photoelectron Spectroscopy
chlorides
Hydrochloric Acid
Photodissociation
atoms
hydrogen chlorides
Molecules
Photons

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Hung, W-H., Wu, S. L., & Chang, C. C. (1998). Low-temperature chlorination of GaAs(100). Journal of Physical Chemistry B, 102(7), 1141-1148.

Low-temperature chlorination of GaAs(100). / Hung, Wei-Hsiu; Wu, Shuenn Lii; Chang, Che Chen.

In: Journal of Physical Chemistry B, Vol. 102, No. 7, 12.02.1998, p. 1141-1148.

Research output: Contribution to journalArticle

Hung, W-H, Wu, SL & Chang, CC 1998, 'Low-temperature chlorination of GaAs(100)', Journal of Physical Chemistry B, vol. 102, no. 7, pp. 1141-1148.
Hung, Wei-Hsiu ; Wu, Shuenn Lii ; Chang, Che Chen. / Low-temperature chlorination of GaAs(100). In: Journal of Physical Chemistry B. 1998 ; Vol. 102, No. 7. pp. 1141-1148.
@article{1a28ea64603b40938da30de3114834a7,
title = "Low-temperature chlorination of GaAs(100)",
abstract = "The chemisorption and the reaction of chlorine and hydrogen chloride on the GaAs(100)-4 × 6 surface at 110 K are investigated using soft X-ray photoelectron spectroscopy which employs synchrotron radiation. At low exposures, Cl2 and HCl dissociate and preferentially adsorb on the As atom, which causes As-Ga bond breakage to initiate chlorination of the Ga atom. AsxCl is proposed to form at initial chlorination, in which the Cl atom is bonded to a high coordination site. Subsequently, various AsClx and GaClx (x = 1, 2, and 3) species are formed on the GaAs surface, and their corresponding chemical shifts are assigned. At high exposures, chlorination of the GaAs surface is saturated, and the surface is mainly covered with physisorbed Cl2 and HCl molecules. Synchrotron radiation on the chlorinated GaAs surface stimulates both the photodesorption of Ga and As chlorides and the photodissociation of physisorbed Cl2 molecules. A potential route for anisotropic cryogenic etching of the GaAs surface by the chlorine-containing compound under photon irradiation is discussed.",
author = "Wei-Hsiu Hung and Wu, {Shuenn Lii} and Chang, {Che Chen}",
year = "1998",
month = "2",
day = "12",
language = "English",
volume = "102",
pages = "1141--1148",
journal = "Journal of Physical Chemistry B Materials",
issn = "1520-6106",
publisher = "American Chemical Society",
number = "7",

}

TY - JOUR

T1 - Low-temperature chlorination of GaAs(100)

AU - Hung, Wei-Hsiu

AU - Wu, Shuenn Lii

AU - Chang, Che Chen

PY - 1998/2/12

Y1 - 1998/2/12

N2 - The chemisorption and the reaction of chlorine and hydrogen chloride on the GaAs(100)-4 × 6 surface at 110 K are investigated using soft X-ray photoelectron spectroscopy which employs synchrotron radiation. At low exposures, Cl2 and HCl dissociate and preferentially adsorb on the As atom, which causes As-Ga bond breakage to initiate chlorination of the Ga atom. AsxCl is proposed to form at initial chlorination, in which the Cl atom is bonded to a high coordination site. Subsequently, various AsClx and GaClx (x = 1, 2, and 3) species are formed on the GaAs surface, and their corresponding chemical shifts are assigned. At high exposures, chlorination of the GaAs surface is saturated, and the surface is mainly covered with physisorbed Cl2 and HCl molecules. Synchrotron radiation on the chlorinated GaAs surface stimulates both the photodesorption of Ga and As chlorides and the photodissociation of physisorbed Cl2 molecules. A potential route for anisotropic cryogenic etching of the GaAs surface by the chlorine-containing compound under photon irradiation is discussed.

AB - The chemisorption and the reaction of chlorine and hydrogen chloride on the GaAs(100)-4 × 6 surface at 110 K are investigated using soft X-ray photoelectron spectroscopy which employs synchrotron radiation. At low exposures, Cl2 and HCl dissociate and preferentially adsorb on the As atom, which causes As-Ga bond breakage to initiate chlorination of the Ga atom. AsxCl is proposed to form at initial chlorination, in which the Cl atom is bonded to a high coordination site. Subsequently, various AsClx and GaClx (x = 1, 2, and 3) species are formed on the GaAs surface, and their corresponding chemical shifts are assigned. At high exposures, chlorination of the GaAs surface is saturated, and the surface is mainly covered with physisorbed Cl2 and HCl molecules. Synchrotron radiation on the chlorinated GaAs surface stimulates both the photodesorption of Ga and As chlorides and the photodissociation of physisorbed Cl2 molecules. A potential route for anisotropic cryogenic etching of the GaAs surface by the chlorine-containing compound under photon irradiation is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0032003885&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032003885&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032003885

VL - 102

SP - 1141

EP - 1148

JO - Journal of Physical Chemistry B Materials

JF - Journal of Physical Chemistry B Materials

SN - 1520-6106

IS - 7

ER -