Low power resistive random access memory using interface-engineered dielectric stack of SiOx/a-Si/TiOy with 1D1R-like structure

Chun-Hu Cheng, K. I. Chou, Zhi Wei Zheng, Hsiao Hsuan Hsu

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In this study, we report a resistive random access memory (RRAM) using trilayer SiOx/a-Si/TiOy film structure. The low switching energy of <10 pJ, highly uniform current distribution (<13% variation), fast 50-ns speed and stable cycling endurance for 106 cycles are simultaneously achieved in this RRAM device. Such good performance can be ascribed to the use of interface-engineered dielectric stack with 1D1R-like structure. The SiOx tunnel barrier in contact with top Ni electrode to form diode-like rectifying element not only lowers self-compliance switching currents, but also improves cycling endurance, which is favorable for the application of high-density 3D memory.

Original languageEnglish
Pages (from-to)139-143
Number of pages5
JournalCurrent Applied Physics
Volume14
Issue number1
DOIs
Publication statusPublished - 2014 Jan 1

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random access memory
endurance
Data storage equipment
cycles
Durability
current distribution
tunnels
Tunnels
Diodes
diodes
Electrodes
electrodes
energy

Keywords

  • Current distribution
  • Resistive random access memory (RRAM)
  • SiO
  • TiO

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Low power resistive random access memory using interface-engineered dielectric stack of SiOx/a-Si/TiOy with 1D1R-like structure. / Cheng, Chun-Hu; Chou, K. I.; Zheng, Zhi Wei; Hsu, Hsiao Hsuan.

In: Current Applied Physics, Vol. 14, No. 1, 01.01.2014, p. 139-143.

Research output: Contribution to journalArticle

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