Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance

Chun Hu Cheng; Fon Shan Yeh; Albert Chin

doi:10.1002/adma.201002946

Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance

Chun Hu Cheng, Fon Shan Yeh, Albert Chin^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

140 Citations (Scopus)

Abstract

Very high performance Ni/GeO_x/HfON/TaN non-volatile resistive memory is fabricated using the covalently bonded dielectric GeO_x and metal oxynitride HfON as well as low cost electrodes. The device shows low set and reset powers, good 85 °C retention, and 10⁵ endurance, which are near to the characteristics of existing commercial flash memory.

Original language	English
Pages (from-to)	902-905
Number of pages	4
Journal	Advanced Materials
Volume	23
Issue number	7
DOIs	https://doi.org/10.1002/adma.201002946
Publication status	Published - 2011 Feb 15
Externally published	Yes

Keywords

GeO
HfON
flexible electronics
resistive random access memory (RRAM)

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201002946

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abstract = "Very high performance Ni/GeOx/HfON/TaN non-volatile resistive memory is fabricated using the covalently bonded dielectric GeOx and metal oxynitride HfON as well as low cost electrodes. The device shows low set and reset powers, good 85 °C retention, and 105 endurance, which are near to the characteristics of existing commercial flash memory.",

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AB - Very high performance Ni/GeOx/HfON/TaN non-volatile resistive memory is fabricated using the covalently bonded dielectric GeOx and metal oxynitride HfON as well as low cost electrodes. The device shows low set and reset powers, good 85 °C retention, and 105 endurance, which are near to the characteristics of existing commercial flash memory.

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KW - HfON

KW - flexible electronics

KW - resistive random access memory (RRAM)

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Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance

Abstract

Keywords

ASJC Scopus subject areas

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