Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance

Chun Hu Cheng, Fon Shan Yeh, Albert Chin

Research output: Contribution to journalArticle

119 Citations (Scopus)

Abstract

Very high performance Ni/GeOx/HfON/TaN non-volatile resistive memory is fabricated using the covalently bonded dielectric GeOx and metal oxynitride HfON as well as low cost electrodes. The device shows low set and reset powers, good 85 °C retention, and 105 endurance, which are near to the characteristics of existing commercial flash memory.

Original languageEnglish
Pages (from-to)902-905
Number of pages4
JournalAdvanced Materials
Volume23
Issue number7
DOIs
Publication statusPublished - 2011 Feb 15

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Flash memory
Durability
Metals
Data storage equipment
Electrodes
Substrates
Costs

Keywords

  • GeO
  • HfON
  • flexible electronics
  • resistive random access memory (RRAM)

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance. / Cheng, Chun Hu; Yeh, Fon Shan; Chin, Albert.

In: Advanced Materials, Vol. 23, No. 7, 15.02.2011, p. 902-905.

Research output: Contribution to journalArticle

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