Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf0.5Zr0.5O2by Optimizing TiNxInterfacial Capping Layer and Its Fatigue Mechanism

Asim Senapati; Zhao Feng Lou; Jia Yang Lee; Yi Pin Chen; Shih Yin Huang; Siddheswar Maikap; Min Hung Lee; Chee Wee Liu

doi:10.1109/LED.2024.3368422

Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf_0.5Zr_0.5O₂by Optimizing TiN_xInterfacial Capping Layer and Its Fatigue Mechanism

Asim Senapati
, Zhao Feng Lou
, Jia Yang Lee
, Yi Pin Chen
, Shih Yin Huang
, Siddheswar Maikap^*
, Min Hung Lee^*
, Chee Wee Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Double remnant polarization (2Pr values are increased significantly from 17.1μC/cm2 to 39.9μC/cm2 by reducing the TiNx interfacial capping layer (ICL) thickness from 3 nm to 1 nm in the Ru/TiNx/Hf0.5 Zr0.5O2(HZO)/TiN structure owing to lower monoclinic (m) phase with respect to orthorhombic (o) plus rhombohedral (r) phases. These phases are observed by geometrical phase analysis (GPA) of high-resolution transmission electron microscope (HRTEM) images. An optimized 2 nm TiNx ICL ferroelectric memory shows lowest fatigue and mechanism is higher m-phase starting to grow from the HZO/TiN BE interface, which is evidenced in the HRTEM image after long endurance of 1011 cycles under high ±4 MV/cm, 0.5μs (remaining higher 2Pr value of 20μC/cm2).

Original language	English
Pages (from-to)	673-676
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	45
Issue number	4
DOIs	https://doi.org/10.1109/LED.2024.3368422
Publication status	Published - 2024 Apr 1
Externally published	Yes

Keywords

fatigue mechanism
ferroelectric memory
furnace annealing
long endurance
scavenged-Ru based electrode
TiNinterfacial capping layer

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2024.3368422

Cite this

@article{58fc4ffc2d644a30888f5a237728780d,

title = "Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf0.5Zr0.5O2by Optimizing TiNxInterfacial Capping Layer and Its Fatigue Mechanism",

abstract = "Double remnant polarization (2Pr values are increased significantly from 17.1μC/cm2 to 39.9μC/cm2 by reducing the TiNx interfacial capping layer (ICL) thickness from 3 nm to 1 nm in the Ru/TiNx/Hf0.5 Zr0.5O2(HZO)/TiN structure owing to lower monoclinic (m) phase with respect to orthorhombic (o) plus rhombohedral (r) phases. These phases are observed by geometrical phase analysis (GPA) of high-resolution transmission electron microscope (HRTEM) images. An optimized 2 nm TiNx ICL ferroelectric memory shows lowest fatigue and mechanism is higher m-phase starting to grow from the HZO/TiN BE interface, which is evidenced in the HRTEM image after long endurance of 1011 cycles under high ±4 MV/cm, 0.5μs (remaining higher 2Pr value of 20μC/cm2).",

keywords = "fatigue mechanism, ferroelectric memory, furnace annealing, long endurance, scavenged-Ru based electrode, TiNinterfacial capping layer",

author = "Asim Senapati and Lou, \{Zhao Feng\} and Lee, \{Jia Yang\} and Chen, \{Yi Pin\} and Huang, \{Shih Yin\} and Siddheswar Maikap and Lee, \{Min Hung\} and Liu, \{Chee Wee\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2024",

month = apr,

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doi = "10.1109/LED.2024.3368422",

language = "English",

volume = "45",

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journal = "IEEE Electron Device Letters",

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T1 - Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf0.5Zr0.5O2by Optimizing TiNxInterfacial Capping Layer and Its Fatigue Mechanism

AU - Senapati, Asim

AU - Lou, Zhao Feng

AU - Lee, Jia Yang

AU - Chen, Yi Pin

AU - Huang, Shih Yin

AU - Maikap, Siddheswar

AU - Lee, Min Hung

AU - Liu, Chee Wee

PY - 2024/4/1

Y1 - 2024/4/1

N2 - Double remnant polarization (2Pr values are increased significantly from 17.1μC/cm2 to 39.9μC/cm2 by reducing the TiNx interfacial capping layer (ICL) thickness from 3 nm to 1 nm in the Ru/TiNx/Hf0.5 Zr0.5O2(HZO)/TiN structure owing to lower monoclinic (m) phase with respect to orthorhombic (o) plus rhombohedral (r) phases. These phases are observed by geometrical phase analysis (GPA) of high-resolution transmission electron microscope (HRTEM) images. An optimized 2 nm TiNx ICL ferroelectric memory shows lowest fatigue and mechanism is higher m-phase starting to grow from the HZO/TiN BE interface, which is evidenced in the HRTEM image after long endurance of 1011 cycles under high ±4 MV/cm, 0.5μs (remaining higher 2Pr value of 20μC/cm2).

AB - Double remnant polarization (2Pr values are increased significantly from 17.1μC/cm2 to 39.9μC/cm2 by reducing the TiNx interfacial capping layer (ICL) thickness from 3 nm to 1 nm in the Ru/TiNx/Hf0.5 Zr0.5O2(HZO)/TiN structure owing to lower monoclinic (m) phase with respect to orthorhombic (o) plus rhombohedral (r) phases. These phases are observed by geometrical phase analysis (GPA) of high-resolution transmission electron microscope (HRTEM) images. An optimized 2 nm TiNx ICL ferroelectric memory shows lowest fatigue and mechanism is higher m-phase starting to grow from the HZO/TiN BE interface, which is evidenced in the HRTEM image after long endurance of 1011 cycles under high ±4 MV/cm, 0.5μs (remaining higher 2Pr value of 20μC/cm2).

KW - fatigue mechanism

KW - ferroelectric memory

KW - furnace annealing

KW - long endurance

KW - scavenged-Ru based electrode

KW - TiNinterfacial capping layer

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