Low operation voltage InGaZnO thin film transistors with LaAlO₃ gate dielectric incorporation

INIS

• operation 100%
• voltage 100%
• transistors 100%
• dielectrics 100%
• thin films 100%
• devices 40%
• gallium 40%
• zinc oxides 40%
• indium 40%
• performance 20%
• ions 20%
• applications 20%
• density 20%
• deposition 20%
• power 20%
• mobility 20%
• oxygen 20%
• speed 20%
• capacitance 20%
• oxides 20%
• thickness 20%
• aluminium oxides 20%
• partial pressure 20%
• lanthanum 20%

Material Science

• Thin-Film Transistor 100%
• Dielectric Material 100%
• Indium 66%
• Zinc Oxide 66%
• Gallium 66%
• Capacitance 33%
• Aluminum Oxide 33%
• Density 33%
• Lanthanum 33%
• Oxide Compound 33%

Engineering

• Gate Dielectric 100%
• Thin film transistors 100%
• Dielectrics 33%
• Oxide Thickness 33%
• Current Ratio 33%
• Good Performance 33%
• Oxygen Partial Pressure 33%
• Gate Capacitance 33%
• Aluminum Oxide 33%
• Deposition Process 33%