Low operation voltage InGaZnO thin film transistors with LaAlO3 gate dielectric incorporation

Z. W. Zheng, C. H. Cheng, Y. C. Chen

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

In this paper, we report low operation voltage indium gallium zinc oxide (IGZO) thin film transistors (TFTs) incorporating a high-κ lanthanum aluminum oxide (LaAlO3) as gate dielectric. Good TFT characteristics were achieved simultaneously, including a small subthreshold swing (SS) of 98 mV/dec, a low threshold voltage (Vt) of 0.29 V, a good on-off-state drive current ratio (Ion /Ioff) of 1.1 × 10 5, and field effect mobility (μFE) of 5.4 cm 2/V · sec. These good performances are related to the high gate capacitance density and small equivalent oxide thickness (EOT) provided by the high-κ LaAlO3 dielectric. Moreover, the effects of oxygen partial pressure during IGZO deposition process on the device characteristics were investigated. The small SS and low Vt allow the devices to be used at operation voltage as low as 1.5 V, which shows the great potential for future high speed and low power applications.

Original languageEnglish
Pages (from-to)N179-N181
JournalECS Journal of Solid State Science and Technology
Volume2
Issue number9
DOIs
Publication statusPublished - 2013 Nov 15

Fingerprint

Gate dielectrics
Thin film transistors
Zinc Oxide
Gallium
Indium
Zinc oxide
Electric potential
Lanthanum
Oxides
Aluminum Oxide
Threshold voltage
Partial pressure
Oxide films
Capacitance
Ions
Oxygen
Aluminum

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Low operation voltage InGaZnO thin film transistors with LaAlO3 gate dielectric incorporation. / Zheng, Z. W.; Cheng, C. H.; Chen, Y. C.

In: ECS Journal of Solid State Science and Technology, Vol. 2, No. 9, 15.11.2013, p. N179-N181.

Research output: Contribution to journalArticle

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