Low-frequency noise properties of GaN nanowires

L. C. Li, K. H. Huang, Y. W. Suen, W. H. Hsieh, C. D. Chen, M. W. Lee, C. C. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We report the temperature (T) dependance (77K to 300K) of the low-frequency electric noise of GaN nanowires. Our results show that these GaN nanowires exhibit the 1/f-like excess noise. A Lorentzian-like feature is observed embedded in the 1/f noise when the applied bias current is large enough. Our four-wire measurement results reveal that the characteristic time τ of the Lorentzian-like noise of the nanowire decreases with T.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages731-732
Number of pages2
DOIs
Publication statusPublished - 2007 Dec 1
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 2006 Jul 242006 Jul 28

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period06/7/2406/7/28

Keywords

  • 1/f noise
  • GaN
  • Lorentzian noise
  • Nanowire

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Li, L. C., Huang, K. H., Suen, Y. W., Hsieh, W. H., Chen, C. D., Lee, M. W., & Chen, C. C. (2007). Low-frequency noise properties of GaN nanowires. In Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B (pp. 731-732). (AIP Conference Proceedings; Vol. 893). https://doi.org/10.1063/1.2730098