Low-frequency contact noise of GaN nanowire device detected by cross-spectrum technique

Liang Chen Li, Kuo Hsun Huang, Jia An Wei, Yuen Wuu Suen, Ting Wei Liu, Chia Chun Chen, Li Chyong Chen, Kuei Hsien Chen

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We report the properties of low-frequency contact noise of multielectrode GaN nanowire (NW) devices. A two-port cross-spectrum technique is used to discriminate the noise of the ohmic contact from that of the NW section. The diameter of the GaN NW is around 100 nm. The Ti/Al electrodes of the NWs are defined by e-beam lithography. The typical resistance of a NW section with a length of 800 nm is about 5.5 kΩ and the two-wire resistance is below 100 kΩ. The results show that the low-frequency excess noise of the GaN NW is much smaller than that of the current-flowing contact, indicating that the contact noise dominates the noise behavior in our GaN NW devices. A careful study of the noise amplitude (A) of the 1/f noise of different types of NW and carbon nanotube devices, both in our work and in the literature, yields an empirical formula for estimating A from the two-wire resistance of the device.

Original languageEnglish
Article number06GF21
JournalJapanese Journal of Applied Physics
Issue number6 PART 2
Publication statusPublished - 2011 Jun 1


ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Li, L. C., Huang, K. H., Wei, J. A., Suen, Y. W., Liu, T. W., Chen, C. C., Chen, L. C., & Chen, K. H. (2011). Low-frequency contact noise of GaN nanowire device detected by cross-spectrum technique. Japanese Journal of Applied Physics, 50(6 PART 2), [06GF21]. https://doi.org/10.1143/JJAP.50.06GF21