Low-capaeitance SCR with waffle layout structure for on-chip ESD protection in RF ICs

Chun Yu Lin; Ming Dou Ker

doi:10.1109/RFIC.2007.380991

Low-capaeitance SCR with waffle layout structure for on-chip ESD protection in RF ICs

Chun Yu Lin^*, Ming Dou Ker

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Citations (Scopus)

Abstract

Silicon-controlled rectifier (SCR) has been used as an effective on-chip ESD protection device in CMOS technology due to the highest ESD robustness. In this work, the waffle layout structure for SCR can achieve smaller parasitic capacitance under the same ESD robustness. With smaller parasitic capacitance, the degradation on RF circuit performance due to ESD protection device can be reduced. The proposed waffle SCR with low parasitic capacitance is suitable for on-chip ESD protection in RF ICs.

Original language	English
Title of host publication	Proceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007
Pages	749-752
Number of pages	4
DOIs	https://doi.org/10.1109/RFIC.2007.380991
Publication status	Published - 2007
Externally published	Yes
Event	2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007 - Honolulu, HI, United States Duration: 2007 Jun 3 → 2007 Jun 5

Publication series

Name	Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN (Print)	1529-2517

Other

Other	2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007
Country/Territory	United States
City	Honolulu, HI
Period	2007/06/03 → 2007/06/05

Keywords

Electrostatic discharges (ESD)
Radio-frequency integrated circuit (RF IC)
Silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/RFIC.2007.380991

Cite this

Low-capaeitance SCR with waffle layout structure for on-chip ESD protection in RF ICs. / Lin, Chun Yu; Ker, Ming Dou.
Proceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007. 2007. p. 749-752 4266539 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lin, CY & Ker, MD 2007, Low-capaeitance SCR with waffle layout structure for on-chip ESD protection in RF ICs. in Proceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007., 4266539, Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, pp. 749-752, 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007, Honolulu, HI, United States, 2007/06/03. https://doi.org/10.1109/RFIC.2007.380991

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title = "Low-capaeitance SCR with waffle layout structure for on-chip ESD protection in RF ICs",

abstract = "Silicon-controlled rectifier (SCR) has been used as an effective on-chip ESD protection device in CMOS technology due to the highest ESD robustness. In this work, the waffle layout structure for SCR can achieve smaller parasitic capacitance under the same ESD robustness. With smaller parasitic capacitance, the degradation on RF circuit performance due to ESD protection device can be reduced. The proposed waffle SCR with low parasitic capacitance is suitable for on-chip ESD protection in RF ICs.",

keywords = "Electrostatic discharges (ESD), Radio-frequency integrated circuit (RF IC), Silicon-controlled rectifier (SCR)",

author = "Lin, {Chun Yu} and Ker, {Ming Dou}",

year = "2007",

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language = "English",

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AB - Silicon-controlled rectifier (SCR) has been used as an effective on-chip ESD protection device in CMOS technology due to the highest ESD robustness. In this work, the waffle layout structure for SCR can achieve smaller parasitic capacitance under the same ESD robustness. With smaller parasitic capacitance, the degradation on RF circuit performance due to ESD protection device can be reduced. The proposed waffle SCR with low parasitic capacitance is suitable for on-chip ESD protection in RF ICs.

KW - Electrostatic discharges (ESD)

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Low-capaeitance SCR with waffle layout structure for on-chip ESD protection in RF ICs

Abstract

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Keywords

ASJC Scopus subject areas

Access to Document

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