Low-capaeitance and fast turn-on SCR for RF ESD protection

Chun Yu Lin*, Ming Dou Ker, Guo Xuan Meng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


With the smaller layout area and parasitic capacitance under the same electrostatic discharge (ESD) robustness, silicon-controlled rectifier (SCR) has been used as an effective on-chip ESD protection device in radio-frequency (RF) IC. In this paper, SCR's with the waffle layout structures are studied to minimize the parasitic capacitance and the variation of the parasitic capacitance within ultra-wide band (UWB) frequencies. With the reduced parasitic capacitance and capacitance variation, the degradation on UWB RF circuit performance can be minimized. Besides, the fast turn-on design on the low-capacitance SCR without increasing the I/O loading capacitance is investigated and applied to an UWB RF power amplifier (PA). The PA co-designed with SCR in the waffle layout structure has been fabricated. Before ESD stress, the RF performances of the ESD-protected PA are as well as that of the unprotected PA. After ESD stress, the unprotected PA is seriously degraded, whereas the ESD-protected PA still keeps the performances well.

Original languageEnglish
Pages (from-to)1321-1330
Number of pages10
JournalIEICE Transactions on Electronics
Issue number8
Publication statusPublished - 2008 Aug
Externally publishedYes


  • Electrostatic discharge (ESD)
  • Low capacitance (low-C)
  • Poweramplifier (PA)
  • Radio-frequency (RF)
  • Silicon-controlled rectifier (SCR)
  • Waffle layout

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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