Low-capacitance SCR with waffle layout structure for on-chip ESD protection in RF ICs

Ming Dou Ker*, Chun Yu Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)


The silicon-controlled rectifier (SCR) has been used as an effective on-chip electrostatic discharge (ESD) protection device in CMOS technology due to the highest ESD robustness in nanoscale integrated circuits (ICs). In this study, the SCR realized in a waffle layout structure is proposed to improve ESD current distribution efficiency for ESD protection and to reduce the parasitic capacitance. The waffle layout structure of the SCR can achieve smaller parasitic capacitance under the same ESD robustness. With smaller parasitic capacitance, the degradation on RF circuit performance due to ESD protection devices can be reduced. The proposed waffle SCR with low parasitic capacitance is suitable for on-chip ESD protection in RF ICs. Besides, the desired current to trigger on the SCR device with a waffle layout structure and its turn-on time has also been investigated in a silicon chip.

Original languageEnglish
Article number4479882
Pages (from-to)1286-1294
Number of pages9
JournalIEEE Transactions on Microwave Theory and Techniques
Issue number5
Publication statusPublished - 2008 May
Externally publishedYes


  • Electrostatic discharge (ESD)
  • RF integrated circuit (RF IC)
  • Silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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