Long-endurance nanocrystal TIO2 resistive memory using a TaON buffer layer

C. H. Cheng; P. C. Chen; Y. H. Wu; F. S. Yeh; Albert Chin

doi:10.1109/LED.2011.2168939

Long-endurance nanocrystal TIO₂ resistive memory using a TaON buffer layer

C. H. Cheng, P. C. Chen, Y. H. Wu, F. S. Yeh, Albert Chin^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

Using nanocrystal (nc) TiO₂ and TaON buffer layer, the Ni/GeO_x/nc-TiO₂/TaON/TaN} resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 10¹⁰ cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.

Original language	English
Article number	6058577
Pages (from-to)	1749-1751
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	12
DOIs	https://doi.org/10.1109/LED.2011.2168939
Publication status	Published - 2011 Dec
Externally published	Yes

Keywords

GeO
Hopping conduction
Resistive random access memory (RRAM)
TiO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2011.2168939

Cite this

@article{fb7ac33c3c754237bc525a04215feb20,

title = "Long-endurance nanocrystal TIO2 resistive memory using a TaON buffer layer",

abstract = "Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN} resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 1010 cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.",

keywords = "GeO, Hopping conduction, Resistive random access memory (RRAM), TiO",

author = "Cheng, {C. H.} and Chen, {P. C.} and Wu, {Y. H.} and Yeh, {F. S.} and Albert Chin",

note = "Funding Information: The publication of this paper was supported by the National Science Council of Taiwan.",

year = "2011",

month = dec,

doi = "10.1109/LED.2011.2168939",

language = "English",

volume = "32",

pages = "1749--1751",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Long-endurance nanocrystal TIO2 resistive memory using a TaON buffer layer

AU - Cheng, C. H.

AU - Chen, P. C.

AU - Wu, Y. H.

AU - Yeh, F. S.

AU - Chin, Albert

N1 - Funding Information: The publication of this paper was supported by the National Science Council of Taiwan.

PY - 2011/12

Y1 - 2011/12

N2 - Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN} resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 1010 cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.

AB - Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN} resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 1010 cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.

KW - GeO

KW - Hopping conduction

KW - Resistive random access memory (RRAM)

KW - TiO

UR - http://www.scopus.com/inward/record.url?scp=81855206563&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=81855206563&partnerID=8YFLogxK

U2 - 10.1109/LED.2011.2168939

DO - 10.1109/LED.2011.2168939

M3 - Article

AN - SCOPUS:81855206563

SN - 0741-3106

VL - 32

SP - 1749

EP - 1751

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

M1 - 6058577

ER -