Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN} resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 1010 cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.
- Hopping conduction
- Resistive random access memory (RRAM)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering