Long-endurance nanocrystal TIO2 resistive memory using a TaON buffer layer

C. H. Cheng, P. C. Chen, Y. H. Wu, F. S. Yeh, Albert Chin

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN} resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 1010 cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.

Original languageEnglish
Article number6058577
Pages (from-to)1749-1751
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number12
DOIs
Publication statusPublished - 2011 Dec 1

Keywords

  • GeO
  • Hopping conduction
  • Resistive random access memory (RRAM)
  • TiO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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