Long-endurance nanocrystal TIO2 resistive memory using a TaON buffer layer

C. H. Cheng, P. C. Chen, Y. H. Wu, F. S. Yeh, Albert Chin

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN} resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 1010 cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.

Original languageEnglish
Article number6058577
Pages (from-to)1749-1751
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number12
DOIs
Publication statusPublished - 2011 Dec 1

Fingerprint

Buffer layers
Nanocrystals
Durability
Data storage equipment
Flash memory
Compliance

Keywords

  • GeO
  • Hopping conduction
  • Resistive random access memory (RRAM)
  • TiO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Long-endurance nanocrystal TIO2 resistive memory using a TaON buffer layer. / Cheng, C. H.; Chen, P. C.; Wu, Y. H.; Yeh, F. S.; Chin, Albert.

In: IEEE Electron Device Letters, Vol. 32, No. 12, 6058577, 01.12.2011, p. 1749-1751.

Research output: Contribution to journalArticle

Cheng, C. H. ; Chen, P. C. ; Wu, Y. H. ; Yeh, F. S. ; Chin, Albert. / Long-endurance nanocrystal TIO2 resistive memory using a TaON buffer layer. In: IEEE Electron Device Letters. 2011 ; Vol. 32, No. 12. pp. 1749-1751.
@article{5a24adca778c42b591a7dae2e2c22673,
title = "Long-endurance nanocrystal TIO2 resistive memory using a TaON buffer layer",
abstract = "Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN} resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 1010 cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.",
keywords = "GeO, Hopping conduction, Resistive random access memory (RRAM), TiO",
author = "Cheng, {C. H.} and Chen, {P. C.} and Wu, {Y. H.} and Yeh, {F. S.} and Albert Chin",
year = "2011",
month = "12",
day = "1",
doi = "10.1109/LED.2011.2168939",
language = "English",
volume = "32",
pages = "1749--1751",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",

}

TY - JOUR

T1 - Long-endurance nanocrystal TIO2 resistive memory using a TaON buffer layer

AU - Cheng, C. H.

AU - Chen, P. C.

AU - Wu, Y. H.

AU - Yeh, F. S.

AU - Chin, Albert

PY - 2011/12/1

Y1 - 2011/12/1

N2 - Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN} resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 1010 cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.

AB - Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN} resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 1010 cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.

KW - GeO

KW - Hopping conduction

KW - Resistive random access memory (RRAM)

KW - TiO

UR - http://www.scopus.com/inward/record.url?scp=81855206563&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=81855206563&partnerID=8YFLogxK

U2 - 10.1109/LED.2011.2168939

DO - 10.1109/LED.2011.2168939

M3 - Article

AN - SCOPUS:81855206563

VL - 32

SP - 1749

EP - 1751

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 12

M1 - 6058577

ER -