Local electric-field-induced oxidation of titanium nitride films

S. Gwo, C. L. Yeh, P. F. Chen, Y. C. Chou, T. T. Chen, T. S. Chao, S. F. Hu, T. Y. Huang

Research output: Contribution to journalArticle

60 Citations (Scopus)

Abstract

Nanometer-scale patterning of TiN films grown on SiO2/Si(001) has been demonstrated using the local electric-field-induced oxidation process with a conductive-probe atomic force microscope. The chemical composition of the modified TiN region was determined by micro-Auger electron spectroscopy and was found to consist of Ti, some trace amount of N, and O, suggesting the formation of titanium oxynitride in the near surface region. The dependence of the oxide height on the sample bias voltage with a fixed scanning speed shows a nonlinear trend in the high electric field regime, indicating that the growth kinetics might be significantly different from previous studies using other film materials.

Original languageEnglish
Pages (from-to)1090-1092
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number8
DOIs
Publication statusPublished - 1999 Dec 1

Fingerprint

titanium nitrides
oxidation
electric fields
oxynitrides
Auger spectroscopy
electron spectroscopy
chemical composition
titanium
microscopes
trends
scanning
oxides
probes
kinetics
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Gwo, S., Yeh, C. L., Chen, P. F., Chou, Y. C., Chen, T. T., Chao, T. S., ... Huang, T. Y. (1999). Local electric-field-induced oxidation of titanium nitride films. Applied Physics Letters, 74(8), 1090-1092. https://doi.org/10.1063/1.123491

Local electric-field-induced oxidation of titanium nitride films. / Gwo, S.; Yeh, C. L.; Chen, P. F.; Chou, Y. C.; Chen, T. T.; Chao, T. S.; Hu, S. F.; Huang, T. Y.

In: Applied Physics Letters, Vol. 74, No. 8, 01.12.1999, p. 1090-1092.

Research output: Contribution to journalArticle

Gwo, S, Yeh, CL, Chen, PF, Chou, YC, Chen, TT, Chao, TS, Hu, SF & Huang, TY 1999, 'Local electric-field-induced oxidation of titanium nitride films', Applied Physics Letters, vol. 74, no. 8, pp. 1090-1092. https://doi.org/10.1063/1.123491
Gwo S, Yeh CL, Chen PF, Chou YC, Chen TT, Chao TS et al. Local electric-field-induced oxidation of titanium nitride films. Applied Physics Letters. 1999 Dec 1;74(8):1090-1092. https://doi.org/10.1063/1.123491
Gwo, S. ; Yeh, C. L. ; Chen, P. F. ; Chou, Y. C. ; Chen, T. T. ; Chao, T. S. ; Hu, S. F. ; Huang, T. Y. / Local electric-field-induced oxidation of titanium nitride films. In: Applied Physics Letters. 1999 ; Vol. 74, No. 8. pp. 1090-1092.
@article{c5ced65ca9a94609885f00e82fe53e9f,
title = "Local electric-field-induced oxidation of titanium nitride films",
abstract = "Nanometer-scale patterning of TiN films grown on SiO2/Si(001) has been demonstrated using the local electric-field-induced oxidation process with a conductive-probe atomic force microscope. The chemical composition of the modified TiN region was determined by micro-Auger electron spectroscopy and was found to consist of Ti, some trace amount of N, and O, suggesting the formation of titanium oxynitride in the near surface region. The dependence of the oxide height on the sample bias voltage with a fixed scanning speed shows a nonlinear trend in the high electric field regime, indicating that the growth kinetics might be significantly different from previous studies using other film materials.",
author = "S. Gwo and Yeh, {C. L.} and Chen, {P. F.} and Chou, {Y. C.} and Chen, {T. T.} and Chao, {T. S.} and Hu, {S. F.} and Huang, {T. Y.}",
year = "1999",
month = "12",
day = "1",
doi = "10.1063/1.123491",
language = "English",
volume = "74",
pages = "1090--1092",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Local electric-field-induced oxidation of titanium nitride films

AU - Gwo, S.

AU - Yeh, C. L.

AU - Chen, P. F.

AU - Chou, Y. C.

AU - Chen, T. T.

AU - Chao, T. S.

AU - Hu, S. F.

AU - Huang, T. Y.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - Nanometer-scale patterning of TiN films grown on SiO2/Si(001) has been demonstrated using the local electric-field-induced oxidation process with a conductive-probe atomic force microscope. The chemical composition of the modified TiN region was determined by micro-Auger electron spectroscopy and was found to consist of Ti, some trace amount of N, and O, suggesting the formation of titanium oxynitride in the near surface region. The dependence of the oxide height on the sample bias voltage with a fixed scanning speed shows a nonlinear trend in the high electric field regime, indicating that the growth kinetics might be significantly different from previous studies using other film materials.

AB - Nanometer-scale patterning of TiN films grown on SiO2/Si(001) has been demonstrated using the local electric-field-induced oxidation process with a conductive-probe atomic force microscope. The chemical composition of the modified TiN region was determined by micro-Auger electron spectroscopy and was found to consist of Ti, some trace amount of N, and O, suggesting the formation of titanium oxynitride in the near surface region. The dependence of the oxide height on the sample bias voltage with a fixed scanning speed shows a nonlinear trend in the high electric field regime, indicating that the growth kinetics might be significantly different from previous studies using other film materials.

UR - http://www.scopus.com/inward/record.url?scp=0000379348&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000379348&partnerID=8YFLogxK

U2 - 10.1063/1.123491

DO - 10.1063/1.123491

M3 - Article

AN - SCOPUS:0000379348

VL - 74

SP - 1090

EP - 1092

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

ER -