Liquid crystal terahertz phase shifters with functional indium-tin-oxide nanostructures for biasing and alignment

Chan Shan Yang; Tsung Ta Tang; Ru Pin Pan; Peichen Yu; Ci Ling Pan

doi:10.1063/1.4871255

Liquid crystal terahertz phase shifters with functional indium-tin-oxide nanostructures for biasing and alignment

Chan Shan Yang, Tsung Ta Tang, Ru Pin Pan, Peichen Yu, Ci Ling Pan^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

Indium Tin Oxide (ITO) nanowhiskers (NWhs) obliquely evaporated by electron-beam glancing-angle deposition can serve simultaneously as transparent electrodes and alignment layer for liquid crystal (LC) devices in the terahertz (THz) frequency range. To demonstrate, we constructed a THz LC phase shifter with ITO NWhs. Phase shift exceeding π/2 at 1.0 THz was achieved in a ∼517 μm-thick cell. The phase shifter exhibits high transmittance (∼78%). The driving voltage required for quarter-wave operation is as low as 5.66 V (rms), compatible with complementary metal-oxide-semiconductor (CMOS) and thin-film transistor (TFT) technologies.

Original language	English
Article number	141106
Journal	Applied Physics Letters
Volume	104
Issue number	14
DOIs	https://doi.org/10.1063/1.4871255
Publication status	Published - 2014 Apr 7
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{a5bf8b5c627444b78d670d0d270e5cb8,

title = "Liquid crystal terahertz phase shifters with functional indium-tin-oxide nanostructures for biasing and alignment",

abstract = "Indium Tin Oxide (ITO) nanowhiskers (NWhs) obliquely evaporated by electron-beam glancing-angle deposition can serve simultaneously as transparent electrodes and alignment layer for liquid crystal (LC) devices in the terahertz (THz) frequency range. To demonstrate, we constructed a THz LC phase shifter with ITO NWhs. Phase shift exceeding π/2 at 1.0 THz was achieved in a ∼517 μm-thick cell. The phase shifter exhibits high transmittance (∼78%). The driving voltage required for quarter-wave operation is as low as 5.66 V (rms), compatible with complementary metal-oxide-semiconductor (CMOS) and thin-film transistor (TFT) technologies.",

author = "Yang, {Chan Shan} and Tang, {Tsung Ta} and Pan, {Ru Pin} and Peichen Yu and Pan, {Ci Ling}",

year = "2014",

month = apr,

day = "7",

doi = "10.1063/1.4871255",

language = "English",

volume = "104",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

}

TY - JOUR

T1 - Liquid crystal terahertz phase shifters with functional indium-tin-oxide nanostructures for biasing and alignment

AU - Yang, Chan Shan

AU - Tang, Tsung Ta

AU - Pan, Ru Pin

AU - Yu, Peichen

AU - Pan, Ci Ling

PY - 2014/4/7

Y1 - 2014/4/7

N2 - Indium Tin Oxide (ITO) nanowhiskers (NWhs) obliquely evaporated by electron-beam glancing-angle deposition can serve simultaneously as transparent electrodes and alignment layer for liquid crystal (LC) devices in the terahertz (THz) frequency range. To demonstrate, we constructed a THz LC phase shifter with ITO NWhs. Phase shift exceeding π/2 at 1.0 THz was achieved in a ∼517 μm-thick cell. The phase shifter exhibits high transmittance (∼78%). The driving voltage required for quarter-wave operation is as low as 5.66 V (rms), compatible with complementary metal-oxide-semiconductor (CMOS) and thin-film transistor (TFT) technologies.

AB - Indium Tin Oxide (ITO) nanowhiskers (NWhs) obliquely evaporated by electron-beam glancing-angle deposition can serve simultaneously as transparent electrodes and alignment layer for liquid crystal (LC) devices in the terahertz (THz) frequency range. To demonstrate, we constructed a THz LC phase shifter with ITO NWhs. Phase shift exceeding π/2 at 1.0 THz was achieved in a ∼517 μm-thick cell. The phase shifter exhibits high transmittance (∼78%). The driving voltage required for quarter-wave operation is as low as 5.66 V (rms), compatible with complementary metal-oxide-semiconductor (CMOS) and thin-film transistor (TFT) technologies.

UR - http://www.scopus.com/inward/record.url?scp=84899024774&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84899024774&partnerID=8YFLogxK

U2 - 10.1063/1.4871255

DO - 10.1063/1.4871255

M3 - Article

AN - SCOPUS:84899024774

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 141106

ER -

Liquid crystal terahertz phase shifters with functional indium-tin-oxide nanostructures for biasing and alignment

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