Light-emitting polymer space-charge-limited transistor

Chun Yu Chen; Yu Chiang Chao; Hsin Fei Meng; Sheng Fu Horng

doi:10.1063/1.3027057

Light-emitting polymer space-charge-limited transistor

Chun Yu Chen, Yu Chiang Chao, Hsin Fei Meng^*, Sheng Fu Horng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Polymer light-emitting transistor is realized by vertically stacking a top-emitting polymer light-emitting diode on a polymer space-charge-limited transistor. The transistor modulates the current flow of the light-emitting diode by the metal-grid base voltage. The active semiconductor of the transistor is poly(3-hexylthiophene). Yellow poly(para-phenylene vinylene) derivative is used as the yellow emitting material. As the cathode is fixed at -12 V and the grid base voltage varies from 0.9 to -0.9 V the light emission is turned on and off with on luminance up to 1208 cd/m². The current efficiency of the light-emitting transistor is 10 cd/A.

Original language	English
Article number	223301
Journal	Applied Physics Letters
Volume	93
Issue number	22
DOIs	https://doi.org/10.1063/1.3027057
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3027057

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title = "Light-emitting polymer space-charge-limited transistor",

abstract = "Polymer light-emitting transistor is realized by vertically stacking a top-emitting polymer light-emitting diode on a polymer space-charge-limited transistor. The transistor modulates the current flow of the light-emitting diode by the metal-grid base voltage. The active semiconductor of the transistor is poly(3-hexylthiophene). Yellow poly(para-phenylene vinylene) derivative is used as the yellow emitting material. As the cathode is fixed at -12 V and the grid base voltage varies from 0.9 to -0.9 V the light emission is turned on and off with on luminance up to 1208 cd/m2. The current efficiency of the light-emitting transistor is 10 cd/A.",

author = "Chen, {Chun Yu} and Chao, {Yu Chiang} and Meng, {Hsin Fei} and Horng, {Sheng Fu}",

note = "Funding Information: This work is supported by the National Science Council of Taiwan under Contract No. NSC96-2112-M-009-036. The authors thank Merck, Inc. for providing the Super Yellow polymer.",

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AU - Chao, Yu Chiang

AU - Meng, Hsin Fei

AU - Horng, Sheng Fu

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AB - Polymer light-emitting transistor is realized by vertically stacking a top-emitting polymer light-emitting diode on a polymer space-charge-limited transistor. The transistor modulates the current flow of the light-emitting diode by the metal-grid base voltage. The active semiconductor of the transistor is poly(3-hexylthiophene). Yellow poly(para-phenylene vinylene) derivative is used as the yellow emitting material. As the cathode is fixed at -12 V and the grid base voltage varies from 0.9 to -0.9 V the light emission is turned on and off with on luminance up to 1208 cd/m2. The current efficiency of the light-emitting transistor is 10 cd/A.

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Light-emitting polymer space-charge-limited transistor

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