Light emission and detection by metal oxide silicon tunneling diodes

C. W. Liu, Min-Hung Lee, C. F. Lin, I. C. Lin, W. T. Liu, H. H. Lin

Research output: Contribution to journalConference article

25 Citations (Scopus)

Abstract

Both NMOS and PMOS light-emitting diodes and photodetectors are demonstrated. For the ultrathin gate oxide, the tunneling gate of metal oxide silicon (MOS) diodes can be utilized as both emitters for light emitting devices and collectors for light detectors. An electron-hole plasma model is used to fit the emission spectra. A surface band bending is responsible for the bandgap reduction in electroluminescence (EL) from the MOS tunneling diode. The dark current of the photodetectors is limited by the thermal generation of minority carrier in the inversion layer. The high growth temperature (1000°C) of the oxide can reduce the dark current to a level as low as 3nA/cm2.

Original languageEnglish
Pages (from-to)749-752
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1999 Dec 1
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: 1999 Dec 51999 Dec 8

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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