### Abstract

In this study, a Y
_{2}
O
_{3}
film doped with Zr was fabricated to form two stacked structures, Al/ZrN/Y
_{2}
O
_{3}
+ Zr/Y
_{2}
O
_{3}
/p-Si (with Zr in the upper layer) and Al/ZrN/Y
_{2}
O
_{3}
/Y
_{2}
O
_{3}
+ Zr/p-Si (with Zr in the lower layer), at rapid thermal annealing (RTA) temperature range of 550, 700, and 850 °C. To analyze the leakage current mechanism, leakage current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics of these two structures were first investigated. By analyzing Schottky emission (SE) and the fit of its equation with experimental data and parameters, dielectric constants were computed to be 11.3 and 6.34, equivalent oxide thicknesses (EOTs) were determined to be 2.42 and 4.3 nm, Schottky barrier heights were calculated to be 0.81 and 0.82 eV, and dynamic dielectric constants were determined to be 13 and 8 for structures with Zr in the upper and lower layers, respectively. By analyzing Poole-Frenkel (P-F) emission and the fit of its equation with experimental data and parameters, trap energy levels were computed to be 0.45 and 0.5 eV, and dynamic dielectric constants were determined to be 1.65 and 2.61 for structures with Zr in the upper and lower layers, respectively. The characteristics of ln(J/T
^{2}
) versus E
^{0.5}
and ln(J/T
^{2}
) versus 1000T in SE and P-F emission were linear, thus conforming to the theoretical equations. Finally, the results of computed parameters in the two structures were compared to validate the leakage current mechanism.

Original language | English |
---|---|

Pages (from-to) | 2198-2202 |

Number of pages | 5 |

Journal | Microelectronics Reliability |

Volume | 55 |

Issue number | 11 |

DOIs | |

Publication status | Published - 2015 Jan 1 |

### Fingerprint

### Keywords

- Poole-Frenkel emission
- Schottky emission
- Y O

### ASJC Scopus subject areas

- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Safety, Risk, Reliability and Quality
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering

### Cite this

_{2}O

_{3}doped with Zr high-K gate dielectrics

*Microelectronics Reliability*,

*55*(11), 2198-2202. https://doi.org/10.1016/j.microrel.2015.07.045

**
Leakage current mechanism and effect of Y
_{2}
O
_{3}
doped with Zr high-K gate dielectrics
.** / Lin, K. C.; Juan, P. C.; Liu, Chuan-Hsi; Wang, M. C.; Chou, C. H.

Research output: Contribution to journal › Article

_{2}O

_{3}doped with Zr high-K gate dielectrics ',

*Microelectronics Reliability*, vol. 55, no. 11, pp. 2198-2202. https://doi.org/10.1016/j.microrel.2015.07.045

_{2}O

_{3}doped with Zr high-K gate dielectrics Microelectronics Reliability. 2015 Jan 1;55(11):2198-2202. https://doi.org/10.1016/j.microrel.2015.07.045

}

TY - JOUR

T1 - Leakage current mechanism and effect of Y 2 O 3 doped with Zr high-K gate dielectrics

AU - Lin, K. C.

AU - Juan, P. C.

AU - Liu, Chuan-Hsi

AU - Wang, M. C.

AU - Chou, C. H.

PY - 2015/1/1

Y1 - 2015/1/1

N2 - In this study, a Y 2 O 3 film doped with Zr was fabricated to form two stacked structures, Al/ZrN/Y 2 O 3 + Zr/Y 2 O 3 /p-Si (with Zr in the upper layer) and Al/ZrN/Y 2 O 3 /Y 2 O 3 + Zr/p-Si (with Zr in the lower layer), at rapid thermal annealing (RTA) temperature range of 550, 700, and 850 °C. To analyze the leakage current mechanism, leakage current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics of these two structures were first investigated. By analyzing Schottky emission (SE) and the fit of its equation with experimental data and parameters, dielectric constants were computed to be 11.3 and 6.34, equivalent oxide thicknesses (EOTs) were determined to be 2.42 and 4.3 nm, Schottky barrier heights were calculated to be 0.81 and 0.82 eV, and dynamic dielectric constants were determined to be 13 and 8 for structures with Zr in the upper and lower layers, respectively. By analyzing Poole-Frenkel (P-F) emission and the fit of its equation with experimental data and parameters, trap energy levels were computed to be 0.45 and 0.5 eV, and dynamic dielectric constants were determined to be 1.65 and 2.61 for structures with Zr in the upper and lower layers, respectively. The characteristics of ln(J/T 2 ) versus E 0.5 and ln(J/T 2 ) versus 1000T in SE and P-F emission were linear, thus conforming to the theoretical equations. Finally, the results of computed parameters in the two structures were compared to validate the leakage current mechanism.

AB - In this study, a Y 2 O 3 film doped with Zr was fabricated to form two stacked structures, Al/ZrN/Y 2 O 3 + Zr/Y 2 O 3 /p-Si (with Zr in the upper layer) and Al/ZrN/Y 2 O 3 /Y 2 O 3 + Zr/p-Si (with Zr in the lower layer), at rapid thermal annealing (RTA) temperature range of 550, 700, and 850 °C. To analyze the leakage current mechanism, leakage current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics of these two structures were first investigated. By analyzing Schottky emission (SE) and the fit of its equation with experimental data and parameters, dielectric constants were computed to be 11.3 and 6.34, equivalent oxide thicknesses (EOTs) were determined to be 2.42 and 4.3 nm, Schottky barrier heights were calculated to be 0.81 and 0.82 eV, and dynamic dielectric constants were determined to be 13 and 8 for structures with Zr in the upper and lower layers, respectively. By analyzing Poole-Frenkel (P-F) emission and the fit of its equation with experimental data and parameters, trap energy levels were computed to be 0.45 and 0.5 eV, and dynamic dielectric constants were determined to be 1.65 and 2.61 for structures with Zr in the upper and lower layers, respectively. The characteristics of ln(J/T 2 ) versus E 0.5 and ln(J/T 2 ) versus 1000T in SE and P-F emission were linear, thus conforming to the theoretical equations. Finally, the results of computed parameters in the two structures were compared to validate the leakage current mechanism.

KW - Poole-Frenkel emission

KW - Schottky emission

KW - Y O

UR - http://www.scopus.com/inward/record.url?scp=84939203747&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84939203747&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2015.07.045

DO - 10.1016/j.microrel.2015.07.045

M3 - Article

AN - SCOPUS:84939203747

VL - 55

SP - 2198

EP - 2202

JO - Microelectronics and Reliability

JF - Microelectronics and Reliability

SN - 0026-2714

IS - 11

ER -