Leakage current mechanism and effect of Y 2 O 3 doped with Zr high-K gate dielectrics

K. C. Lin, P. C. Juan, Chuan-Hsi Liu, M. C. Wang, C. H. Chou

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this study, a Y 2 O 3 film doped with Zr was fabricated to form two stacked structures, Al/ZrN/Y 2 O 3 + Zr/Y 2 O 3 /p-Si (with Zr in the upper layer) and Al/ZrN/Y 2 O 3 /Y 2 O 3 + Zr/p-Si (with Zr in the lower layer), at rapid thermal annealing (RTA) temperature range of 550, 700, and 850 °C. To analyze the leakage current mechanism, leakage current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics of these two structures were first investigated. By analyzing Schottky emission (SE) and the fit of its equation with experimental data and parameters, dielectric constants were computed to be 11.3 and 6.34, equivalent oxide thicknesses (EOTs) were determined to be 2.42 and 4.3 nm, Schottky barrier heights were calculated to be 0.81 and 0.82 eV, and dynamic dielectric constants were determined to be 13 and 8 for structures with Zr in the upper and lower layers, respectively. By analyzing Poole-Frenkel (P-F) emission and the fit of its equation with experimental data and parameters, trap energy levels were computed to be 0.45 and 0.5 eV, and dynamic dielectric constants were determined to be 1.65 and 2.61 for structures with Zr in the upper and lower layers, respectively. The characteristics of ln(J/T 2 ) versus E 0.5 and ln(J/T 2 ) versus 1000T in SE and P-F emission were linear, thus conforming to the theoretical equations. Finally, the results of computed parameters in the two structures were compared to validate the leakage current mechanism.

Original languageEnglish
Pages (from-to)2198-2202
Number of pages5
JournalMicroelectronics Reliability
Volume55
Issue number11
DOIs
Publication statusPublished - 2015 Jan 1

Fingerprint

Gate dielectrics
Leakage currents
leakage
Permittivity
permittivity
Rapid thermal annealing
Electric potential
Oxides
Electron energy levels
capacitance-voltage characteristics
Capacitance
energy levels
traps
annealing
oxides
electric potential
Temperature
temperature

Keywords

  • Poole-Frenkel emission
  • Schottky emission
  • Y O

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Leakage current mechanism and effect of Y 2 O 3 doped with Zr high-K gate dielectrics . / Lin, K. C.; Juan, P. C.; Liu, Chuan-Hsi; Wang, M. C.; Chou, C. H.

In: Microelectronics Reliability, Vol. 55, No. 11, 01.01.2015, p. 2198-2202.

Research output: Contribution to journalArticle

Lin, K. C. ; Juan, P. C. ; Liu, Chuan-Hsi ; Wang, M. C. ; Chou, C. H. / Leakage current mechanism and effect of Y 2 O 3 doped with Zr high-K gate dielectrics In: Microelectronics Reliability. 2015 ; Vol. 55, No. 11. pp. 2198-2202.
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AU - Juan, P. C.

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AU - Chou, C. H.

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AB - In this study, a Y 2 O 3 film doped with Zr was fabricated to form two stacked structures, Al/ZrN/Y 2 O 3 + Zr/Y 2 O 3 /p-Si (with Zr in the upper layer) and Al/ZrN/Y 2 O 3 /Y 2 O 3 + Zr/p-Si (with Zr in the lower layer), at rapid thermal annealing (RTA) temperature range of 550, 700, and 850 °C. To analyze the leakage current mechanism, leakage current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics of these two structures were first investigated. By analyzing Schottky emission (SE) and the fit of its equation with experimental data and parameters, dielectric constants were computed to be 11.3 and 6.34, equivalent oxide thicknesses (EOTs) were determined to be 2.42 and 4.3 nm, Schottky barrier heights were calculated to be 0.81 and 0.82 eV, and dynamic dielectric constants were determined to be 13 and 8 for structures with Zr in the upper and lower layers, respectively. By analyzing Poole-Frenkel (P-F) emission and the fit of its equation with experimental data and parameters, trap energy levels were computed to be 0.45 and 0.5 eV, and dynamic dielectric constants were determined to be 1.65 and 2.61 for structures with Zr in the upper and lower layers, respectively. The characteristics of ln(J/T 2 ) versus E 0.5 and ln(J/T 2 ) versus 1000T in SE and P-F emission were linear, thus conforming to the theoretical equations. Finally, the results of computed parameters in the two structures were compared to validate the leakage current mechanism.

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