Leakage current improvement of Ni/TiNiO/TaN metal-insulator-metal capacitors using optimized N+ plasma treatment and oxygen annealing

C. C. Huang; C. H. Cheng; Albert Chin; C. P. Chou

doi:10.1149/1.2756626

Leakage current improvement of Ni/TiNiO/TaN metal-insulator-metal capacitors using optimized N⁺ plasma treatment and oxygen annealing

C. C. Huang^*, C. H. Cheng, Albert Chin, C. P. Chou

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We have investigated the effects of N+ plasma treatment and oxygen annealing on NiTiNiOTaN capacitors. The postdeposition annealing of TiNiO under oxygen ambient increases the capacitance density but trades off the increased leakage current. This leakage current can be largely decreased by applying an optimized N+ plasma treatment. At high capacitance density of 17.1 fFμ m2, a low leakage current of 7.7× 10-6 A cm2 at 1 V is obtained indicating good potential integrated circuit application.

Original language	English
Pages (from-to)	H287-H290
Journal	Electrochemical and Solid-State Letters
Volume	10
Issue number	10
DOIs	https://doi.org/10.1149/1.2756626
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.2756626

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title = "Leakage current improvement of Ni/TiNiO/TaN metal-insulator-metal capacitors using optimized N+ plasma treatment and oxygen annealing",

abstract = "We have investigated the effects of N+ plasma treatment and oxygen annealing on NiTiNiOTaN capacitors. The postdeposition annealing of TiNiO under oxygen ambient increases the capacitance density but trades off the increased leakage current. This leakage current can be largely decreased by applying an optimized N+ plasma treatment. At high capacitance density of 17.1 fFμ m2, a low leakage current of 7.7× 10-6 A cm2 at 1 V is obtained indicating good potential integrated circuit application.",

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AU - Huang, C. C.

AU - Cheng, C. H.

AU - Chin, Albert

AU - Chou, C. P.

PY - 2007

Y1 - 2007

N2 - We have investigated the effects of N+ plasma treatment and oxygen annealing on NiTiNiOTaN capacitors. The postdeposition annealing of TiNiO under oxygen ambient increases the capacitance density but trades off the increased leakage current. This leakage current can be largely decreased by applying an optimized N+ plasma treatment. At high capacitance density of 17.1 fFμ m2, a low leakage current of 7.7× 10-6 A cm2 at 1 V is obtained indicating good potential integrated circuit application.

AB - We have investigated the effects of N+ plasma treatment and oxygen annealing on NiTiNiOTaN capacitors. The postdeposition annealing of TiNiO under oxygen ambient increases the capacitance density but trades off the increased leakage current. This leakage current can be largely decreased by applying an optimized N+ plasma treatment. At high capacitance density of 17.1 fFμ m2, a low leakage current of 7.7× 10-6 A cm2 at 1 V is obtained indicating good potential integrated circuit application.

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Leakage current improvement of Ni/TiNiO/TaN metal-insulator-metal capacitors using optimized N⁺ plasma treatment and oxygen annealing

Abstract

ASJC Scopus subject areas

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