Leakage current improvement of Ni/TiNiO/TaN metal-insulator-metal capacitors using optimized N+ plasma treatment and oxygen annealing

C. C. Huang, C. H. Cheng, Albert Chin, C. P. Chou

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We have investigated the effects of N+ plasma treatment and oxygen annealing on NiTiNiOTaN capacitors. The postdeposition annealing of TiNiO under oxygen ambient increases the capacitance density but trades off the increased leakage current. This leakage current can be largely decreased by applying an optimized N+ plasma treatment. At high capacitance density of 17.1 fFμ m2, a low leakage current of 7.7× 10-6 A cm2 at 1 V is obtained indicating good potential integrated circuit application.

Original languageEnglish
Pages (from-to)H287-H290
JournalElectrochemical and Solid-State Letters
Issue number10
Publication statusPublished - 2007 Aug 20
Externally publishedYes


ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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