INIS
oxides
100%
thickness
100%
dielectrics
100%
leakage current
100%
height
25%
data
25%
layers
25%
barriers
25%
emission
25%
interfaces
25%
temperature dependence
25%
silicon oxides
25%
electrons
25%
current density
25%
capacitors
25%
traps
25%
electric fields
25%
energy levels
25%
laos
25%
Engineering
Gate Dielectric
100%
Oxide Thickness
100%
Density
50%
Atomic Layer
50%
Lower Temperature
50%
Barrier Height
50%
Dielectrics
50%
Temperature Dependence
50%
Energy Level
50%
Data Show
50%
Quantum Effect
50%
Electric Field
50%
Physics
Behavior
100%
Oxide
100%
Dielectrics
100%
Temperature
33%
Emission
33%
Region
33%
Capacitor
33%
Temperature Dependence
33%
Electrons
33%
Electric Fields
33%
Energy Levels
33%
Material Science
Oxide
100%
Dielectric Material
100%
Temperature
66%
Density
33%
Capacitor
33%