Leakage current conduction behaviors of 0.65 nm equivalent-oxide-thickness HfZrLaO gate dielectrics

K. C. Lin, J. Y. Chen, H. W. Hsu, H. W. Chen, Chuan-Hsi Liu

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The high κ gate dielectrics of MOS capacitors with LaO/HfZrO stacked (denoted as HfZrLaO) have been fabricated by atomic-layer-deposited (ALD). In this study, the data show that the gate leakage current density (Jg) is about 1.9 A/cm2, and the equivalent oxide thickness (EOT) is about 0.65 nm with quantum effects taken into account. The analysis of the leakage current conduction characteristics is based on the temperature dependence of the leakage current from 300 to 475 K. The dominant current conduction behaviors are Schottky emission in the region of low electric fields (<1 MV/cm) and high temperatures (450-475 K), Poole-Frankel (P-F) emission in the region of medium electric fields (2.3-3.83 MV/cm) and low temperatures (300-350 K), and Fowler-Nordheim (F-N) tunneling in the region of high electric fields (>4 MV/cm) and low temperatures (<300 K). The electron barrier height (ΦB) at gate interface and the trap energy level (Φt) in the dielectric are extracted to be 1.07 and 1.38 eV, respectively.

Original languageEnglish
Pages (from-to)7-11
Number of pages5
JournalSolid-State Electronics
Volume77
DOIs
Publication statusPublished - 2012 Nov 1

Fingerprint

Gate dielectrics
Leakage currents
Oxides
leakage
conduction
oxides
MOS capacitors
Electron energy levels
capacitors
Current density
energy levels
Electric fields
traps
current density
Temperature
temperature dependence
electric fields
Electrons
electrons

Keywords

  • Current conduction characteristics
  • Fowler-Nordheim (F-N) tunneling
  • HfZrLaO
  • Poole-Frankel (P-F) emission
  • Schottky emission

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Leakage current conduction behaviors of 0.65 nm equivalent-oxide-thickness HfZrLaO gate dielectrics. / Lin, K. C.; Chen, J. Y.; Hsu, H. W.; Chen, H. W.; Liu, Chuan-Hsi.

In: Solid-State Electronics, Vol. 77, 01.11.2012, p. 7-11.

Research output: Contribution to journalArticle

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AB - The high κ gate dielectrics of MOS capacitors with LaO/HfZrO stacked (denoted as HfZrLaO) have been fabricated by atomic-layer-deposited (ALD). In this study, the data show that the gate leakage current density (Jg) is about 1.9 A/cm2, and the equivalent oxide thickness (EOT) is about 0.65 nm with quantum effects taken into account. The analysis of the leakage current conduction characteristics is based on the temperature dependence of the leakage current from 300 to 475 K. The dominant current conduction behaviors are Schottky emission in the region of low electric fields (<1 MV/cm) and high temperatures (450-475 K), Poole-Frankel (P-F) emission in the region of medium electric fields (2.3-3.83 MV/cm) and low temperatures (300-350 K), and Fowler-Nordheim (F-N) tunneling in the region of high electric fields (>4 MV/cm) and low temperatures (<300 K). The electron barrier height (ΦB) at gate interface and the trap energy level (Φt) in the dielectric are extracted to be 1.07 and 1.38 eV, respectively.

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